MG50N2YS Search Results

MG50N2YS Datasheets (3)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MG50N2YS1		Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	51.97KB	1
MG50N2YS1		Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF	2.18MB	79
MG50N2YS1		Toshiba	TRANSISTOR MODULES	Scan	PDF	362.24KB	5

MG50N2YS Price and Stock

Filter by Manufacturer

Toshiba America Electronic Components


Toshiba America Electronic Components MG50N2YS40
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MG50N2YS40		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components MG50N2YS1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	MG50N2YS1		6,940			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MG50N2YS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PC 181 OPTO Abstract: MG50N2YS1 16175 MU51 Contextual Info: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 \| 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm	OCR Scan	cigci72s0 ddlbl74 mg50n2ys1 ega-mg50n2ys1-4 +5dt-33 ega-mg50n2ys1-pc 181 opto 16175 mu51	PDF
MG50N2YS1 Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG50N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1. Ofis Max. trr= 0 .5¿is (Max.) . Low Saturation Voltage: V(;E(sat) = 5 .OV (Max.) . Enhancement-Mode	OCR Scan	mg50n2ys1 x10ns	PDF
la7200 Abstract: MG50N2YS Contextual Info: MG50N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5<Js(Max.) . Low Saturation Voltage: VcE(sat)= 5.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One	OCR Scan	mg50n2ys1 el/08 la7200 mg50n2ys	PDF
MG50N2YS9 Abstract: P channel 50A IGBT Contextual Info: GTR MODULE_ SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf=l.Oys Max. trr=0.5ys(Max.) . Low Saturation Voltage: VcE(sat)=5.0V(Max.) . Enhancement-Mode	OCR Scan	mg50n2ys9 00a/as p channel 50a igbt	PDF
MG50N2YS9 Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG50N2YS9 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . High Input Impedance . High Speed : tf "1. 0/is Max. trr=0.5us(Max.) . Low Saturation Voltage: (sat:)~5.OV(Max .) . Enhancement-Mode . includes a CompLete Half Bridge in One	OCR Scan	mg50n2ys9	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106daa1 /sc-70 ytf612 2sk2381 +15ytf841 2sk2387 ytf442 2sk2149 ytf613 toshiba mg150n2ys40 mg75n2ys40 mg15n6es42 mg150n2ys40 2sk150a toshiba s2530a 2sk270a mg8n6es42 mg15g1al2 mg75j2ys40	PDF
Snubber circuit Design Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac teristics are closely related each other and cannot be considered independently are further, very	OCR Scan	30u6p42 50u6p43 75u6p43 100u6p43 +10snubber circuit design mg15g6el1 mg20g6el1 mg25n6ek1 160u2g43 equivalent mg300g1ul1 igbt snubber for inductive load calculation of igbt snubber mg400g1ul1 what is fast igbt transistor	PDF
MG30H1BL1 Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1 Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX	OCR Scan	00-600v -1400v gt8n101 gt8q101 +16gt25h101p mg25h1bs1 gt25ji01 gt50g102 mg50h1bs1 gt50j101 mg30h1bl1 s3885 mg100h2zs1 mg100g2ys1 mg100n2ys1 mp6502 mg150j2ys1 mp6101 mg25q6es1 mg15j6es1	PDF
mg75n2ys40 Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上げます。廃止品種 1 形名 02BZ2.2~4.7 代替品種	Original	02bz2 1s2092 1sz5759 02cz2 +161s2094 2n3055 02cz5 1s2095a 2n3713 02z24a1m mg75n2ys40 mg15n6es42 2sk150a 2sk270a mg150n2ys40 mg8n6es42 mg15g1al2 mg75j2ys40 mg30g1bl2 s2530a	PDF
MG100g2ys1 Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1 Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series	OCR Scan	eg50n2ys9 g15n2ysi mg25n2ys1 mg50n2ys1 +16g35q2ysi mg25q2ys1 mg50q2ys1 mg25s2ys1 g25n1js1 g50n1js1 mg100g2ys1 mg25q6es1 mg100j2ys1 ytf830 gt25q103 gt15h101 toshiba mg50n2ys9 mg200j2ys1 mg75n2ys1 mg75j2ys1	PDF
mg75n2ys40 Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106daa1 ytf842 2sk2387 ytf441 +152sk2149 ytf613 2sk2381 ytf843 ytf442 mg75n2ys40 2n3055 toshiba mg150n2ys40 tlr103 toshiba 2n3055 mg15n6es42 2sk150a toshiba mg150n2ys40 2sk270a s2530a	PDF
MG30G2CL3 Abstract: MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1 Contextual Info: 9097250 TOSHIBA DISCRETE/O PTO TOSHIBA {DISCRETE/OPTO} TO 9 0D 16488 D T- T Ë j \| TOT VE h U UUJihMöö Jb p GTR Modules Bipolar Darlington n o te : W A STA G E DARLINGTON, CK):3-STAGE DARLINGTON $:UNDER DEVELOPMENT * :V c e x <s u s i #:UL RECOGNIZED	OCR Scan	mg100g1al3 mg200h1alz mg30g1bl3 mg50g1bl +12mg75g1bl1 mg25m1bk1 mg50m1bk1 mg100g1fl1 m6150h1fli mg30ch1fu mg30g2cl3 mg50m2ck2 mg10g6el2 mg30g6el1 mg20g6el1 mg25h2ys1	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	rd91eb q2n4401 d1n3940 q2n2907a +7d1n1190 q2sc1815 q2n3055 q2n1132 d1n750 d02cz10 d1n751	PDF