FLK027XV Search Results

FLK027XV Datasheets (1)

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Fujitsu

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLK027XV		Fujitsu	GaAs FET & HEMT Chip	Original	PDF	89.79KB	4

FLK027XV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
108 to 174 mhz Abstract: FLK027XP FLK027XV Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	flk027xp flk027xv fcsi0598m200 108 to 174 mhz	PDF
1278n Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	flk027xp flk027xv 1278n	PDF
Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	flk027xp flk027xv	PDF
FLK027XP Abstract: FLK027XV urn 3177 GaAs FET HEMT Chips Contextual Info: FLK027XP, FLK027XV - GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-\|<jB = 24.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION	OCR Scan	flk027xp flk027xv fcsi0598m200 urn 3177 +1gaas fet hemt chips	PDF
FLK027XP Abstract: FLK027XV Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	flk027xp flk027xv unit4888	PDF
Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	flk027xp flk027xv fcsi0598m200	PDF
FLK027XP Abstract: GaAs FET HEMT Chips FLK027XV Contextual Info: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is	Original	flk027xp flk027xv gaas fet hemt chips	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	flc167wf fcsi0598m200 cd 294 fll357 +8348db fll400ip-2 flk102mh-14 hemt low noise die fujitsu gaas fet amplifier flk017xp fll120 fujitsu gaas fet	PDF
Filtronic Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15	Original	fpd3000 fpd2250 fpd1500 fpd1050 +11fpd750 fpd6836 fpd200 fpd7612 epa240b epa160b filtronic eudyna epa018a ph15 transistor flc087xp	PDF