EPA480BV
Abstract: IGD 75a 12v EPA480B
Contextual Info: Excelics EPA480B/EPA480BV PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 12.0dB FOR EPA480BV AT 12GHz 0.4X 4800 MICRON RECESSED “MUSHROOM” GATE
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IGD 75a 12v
Abstract: EPA480B EPA480BV
Contextual Info: EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 9.0dB FOR EPA480BV AT 12GHz 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EFA480B
Abstract: EFA480BV EPA480BV
Contextual Info: EFA480B/EFA480BV Low Distortion GaAs Power FET FEATURES • • • • • • • 960 156 50 +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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EFA480B
Abstract: EFA480BV EPA480BV gm 90 156 369
Contextual Info: Excelics EFA480B/EFA480BV PRELIMINARY DATA SHEET Low Distortion GaAs Power FET 960 • • • • • • • +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE
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