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    EPA160A Datasheets (2)

    Excelics Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EPA160A
    		Excelics Semiconductor 8-12V high efficiency heterojunction power FET Original PDF 28KB 2
    EPA160AV
    		Excelics Semiconductor High Efficiency Heterojunction Power FET Original PDF 51.8KB 2
    SF Impression Pixel

    EPA160A Price and Stock

    Excelics Semiconductor

    Excelics Semiconductor EPA160A

    RF High Efficiency Hetero Junction Power FET
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    EPA160A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EPA160A

    Abstract: 9018 transistor EPA160A-100P 100MIL
    Contextual Info: EPA160A-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +31.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		epa160a-100p100mil12ghz18ghz+2epa160a9018 transistor PDF

    EPA160A

    Contextual Info: EPA160A High Efficiency Heterojunction Power FET UPDATED 05/12/2006 FEATURES • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		epa160a18ghz12ghz PDF

    EPA160AV

    Abstract: EPA160A
    Contextual Info: EPA160A/EPA160AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		epa160a/epa160avepa160aepa160av18ghz PDF

    EPA160A

    Contextual Info: Excelics EPA160A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION


    Original     		epa160a18ghz12ghz PDF

    EPA160AV

    Abstract: EPA160A
    Contextual Info: Excelics EPA160A/EPA160AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN FOR EPA160A AND 10.0dB FOR EPA160AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		epa160a/epa160avepa160aepa160av18ghz+112ghz PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		epa080a-100pepa060b-70epa240bvepa018a+6eic7179-4microwave gaas fet catalogueemp108-p1epa160avepa120evepa480c PDF

    EPA060A

    Abstract: EPA060AV EPA160AV
    Contextual Info: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		epa060a/epa060avepa060aepa060av18ghz+1epa160av PDF

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		efa018a00e-1240e-1400e-08+1263e-1380e-1400e-14efa025acurticeepa030aepa480cepa060befa040aepa025220e-12excelics epa018a PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		epa018aepa025aepa030cepa040a+11epa060aefa480befa480cefa720aefa960befa1200aepa060befa018aexcelics epa018aepa480cepa240d PDF

    EMA302B

    Abstract: EPA080A EPA160A
    Contextual Info: Excelics EMA302B PRELIMINARY DATA SHEET 22-26 GHz Medium Power MMIC 85 165 50 165 Operating Frequency Range 1020 F PARAMETERS/TEST CONDITIONS 325 425 50 95 900 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS1 Ta = 25 OC


    Original     		ema302bepa080aepa160a PDF