BCR503 |
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Infineon Technologies
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NPN Silicon Digital Transistor |
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BCR503 |
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Infineon Technologies
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Single Ic = 500 mA; Package: PG-SOT23-3; Polarity: NPN; R1 (typ): 2.2 kOhm; R2: 2.2 k?; hFE (min): 40.0; Vi (on) (min): 1.0 2mA / 0.3V; |
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BCR503 |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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BCR503 |
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Siemens
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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit) |
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BCR 503 B6327 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 300MW SOT23-3 |
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Original |
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BCR503B6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 300MW SOT23-3 |
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Original |
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BCR 503E6327 |
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Infineon Technologies
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TRANS DIGITAL BJT NPN 50V 500MA 3SOT-23 T/R |
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Original |
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BCR503E6327 |
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Infineon Technologies
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 300MW SOT23-3 |
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Original |
PDF
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BCR503E6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS NPN 300MW SOT23-3 |
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Original |
PDF
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BCR503E6393HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP SOT23 |
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