| BAS45 |
|
Philips Semiconductors
|
Low Leakage Diode |
Original |
PDF
|
69.14KB |
4 |
| BAS45 |
|
Siemens
|
Cross Reference Guide 1998 |
Original |
PDF
|
27.35KB |
7 |
| BAS45 |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
83.45KB |
1 |
| BAS45 |
|
Unknown
|
Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
|
35.02KB |
1 |
| BAS45A |
|
NXP Semiconductors
|
BAS45A - Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V |
Original |
PDF
|
70.69KB |
8 |
| BAS45A |
|
Philips Semiconductors
|
Low-leakage diode |
Original |
PDF
|
35.3KB |
6 |
| BAS45A |
|
Philips Semiconductors
|
Low-leakage diode |
Scan |
PDF
|
149.94KB |
5 |
| BAS45A,113 |
|
NXP Semiconductors
|
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD68 (DO-34); Container: Reel pack axial radial |
Original |
PDF
|
70.76KB |
8 |
| BAS45A,133 |
|
NXP Semiconductors
|
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD68 (DO-34); Container: Ammo pack axial radial taped |
Original |
PDF
|
70.76KB |
8 |
| BAS45A,143 |
|
NXP Semiconductors
|
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD68 (DO-34); Container: Ammo pack axial radial taped |
Original |
PDF
|
70.76KB |
8 |
| BAS45AAMO |
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
40.24KB |
1 |
| BAS45AL |
|
NXP Semiconductors
|
BAS45AL - Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V |
Original |
PDF
|
87.67KB |
11 |
| BAS45AL |
|
Philips Semiconductors
|
Low-leakage diode |
Original |
PDF
|
50.95KB |
8 |
| BAS45AL,115 |
|
NXP Semiconductors
|
BAS45 - DIODE 0.25 A, 125 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode |
Original |
PDF
|
87.67KB |
11 |
|
|
| BAS45AL,115 |
|
NXP Semiconductors
|
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V; Package: SOD80C (LLDS; MiniMelf); Container: Tape reel smd |
Original |
PDF
|
69.9KB |
8 |
| BAS45ALT/R |
|
NXP Semiconductors
|
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V |
Original |
PDF
|
69.9KB |
8 |
| BAS45AT/R |
|
NXP Semiconductors
|
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V |
Original |
PDF
|
70.76KB |
8 |
| BAS45ATR |
|
Philips Semiconductors
|
Low-leakage diode |
Original |
PDF
|
37.73KB |
6 |
| BAS45AT/R |
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
PDF
|
40.24KB |
1 |
| BAS45L |
|
Philips Semiconductors
|
Low Leakage Diode |
Original |
PDF
|
83.43KB |
4 |
