711DF Search Results

bgjg

Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

X3A-BFT93

Abstract: BFQ23 philips bfq23 BFQ24 BFT93
Contextual Info: "P3M ÌO PNP 5 GHz wideband transistor crystal P h ilip s S e m icon d u ctors PHILIPS INTERNATIONAL X3A-BFT93 711DfiSb OOMblCH T7M SbE ]> DESCRIPTION P rod u ct sp ecification M E C H A N IC A L DATA PN P crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole

BUK543

Abstract: BUK543-60A BUK543-60B TTA10
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack

D441

Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437
Contextual Info: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector

MCL T1-1

Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Contextual Info: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM

m3303

Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
Contextual Info: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

IL 741

Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Contextual Info: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In

P3Q22V10-7A

Abstract: P3Q22V10-7D P3Q22V10-7N Pal programming 22v10
Contextual Info: PHILIPS INT ERNATIONAL bSE J> m 711DflEb O D b i n S 3SR • P H I N Philip» Sem iconductors Low Voltage specification 3 Volt BiCMOS Versatile PAL P3Q22V10-7 DESCRIPTION FEATURES

J108

Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
Contextual Info: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)

THYRISTOR ts 602

Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .

BU603

Abstract: USA060-1
Contextual Info: 11 PHILIPS INTERNATIONAL 4SE D B 711Dfi2ti ODBOflfl'i 1 Œ P H I N BU603 T'33-/3 — SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope intended fo r use in power supplies and deflection circuits fo r colour receivers and monitors.

RZB12250Y

Contextual Info: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.

BTW42-600R

Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Contextual Info: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase

International Power Sources

Abstract: LWE2025R
Contextual Info: T -3 3 -0 5 LWE2025R / \ PHILIPS INTERNATIONAL 5bE D • 711Dfl5b DDMbSTfc. 35fl BiPHIN MICROWAVE LINEAR POWER TRANSISTOR NPN silicon p ow er tra n sisto r fo r use in a co m m o n -e m itte r,cla ss-A a m p lifie r up to 2.3 G H z in CW c o n d itio n s in m ilita ry and professional applications.

k 246 transistor fet

Abstract: 100-P BUK571 BUK571-60A BUK571-60B K571 1e43
Contextual Info: PHILIPS INTERNATIONAL 5fc,E D Philips Components • 711Dfi2b 324 ■ PHIN Data sheet B status Preliminary specification date of issue March 1991 Replaces BUK541-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

74ABT2952

Abstract: 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW
Contextual Info: INTEGRATED CIRCUITS 74ABT2952 Octal registered transceiver 3-State Product specification 1995 Feb 16 IC23 Data Handbook Philips Semiconductors PHILIPS • 711DflSb □□flbcIS7 b û 7 ■ This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors

SCN26562

Abstract: SCN26562C4A52 SCN26562C4N48
Contextual Info: INTEGRATED CIRCUITS SCN26562 Dual universal serial communications controller DUSCC Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 711DflSb ôbT Philips Semiconductors Product specification Dual universal serial communications controller (DUSCC)

Contextual Info: “~T:L3 3 r~ l 5 RX3034B70W D E V EL O P M EN T DATA T h is data sheet c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are su b ject to cha nge w it h o u t notice. PHILIPS i n t e r n a t i o n a l S b E ]> • 711Dfl2b O O t4fciS3ti b2fc, « P H I N

T0220AB

Abstract: ScansUX66
Contextual Info: PHILIPS INTERNATIONAL 41E ]> P 711Dfl2ti G'QEmfl? £ ggPHIN r - 2 3 '0 7 _ Philips Com ponents BWS2E-100/150/200 Data sheet status Preliminary specification date o f issue January 1991 GENERAL DESCRIPTION Glass passivated, high efficiency, rugged dual epitaxial rectifier

BUK102-50GL

Abstract: IEC134 T0220AB AAB3 buk102-500l
Contextual Info: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and

BYW96D

Abstract: diodes byw96d BYW96E ScansUX69
Contextual Info: 711DfiSb 0 0 4 0 7 1 7 0=12 H P H I N 5bE D PHILIPS INT E RN A TI ONA L SbE D _ BYW96D BYW96E _ T - 0 3 - ÍS AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan rectifiers,

Contextual Info: 711DfiEb D D b T ì S ? SS2 « P H I N PXTA77 A_ _ _ _ _ SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal d a rlin g to n transistors, housed in a m icro m in ia tu re envelope SO T89 . T he com p le m e n tary ty p e is the P X T A 2 7 . QUICK REFERENCE DATA

Contextual Info: 711Dfi2b D D b ' m i 710 • PHIN PZTA92 PZTA93 SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature SMD envelope SOT-223 . They are primarily intended for use in telephony and professional communication equipment. QUICK REFERENCE DATA Collector-base voltage (open emitter)