7110FI Search Results

TDA8709

Abstract: IEC134 S028 TDA8709T fdk id
Contextual Info: Philips Semiconductors Product specification T -1 7 -0 7 -1 3 Video analog input interface TDA8709 PHILIPS INTERNATIONAL SbE D 7110fi2b 0 0 3 7 C H 3 FEATURES APPLICATIONS • 8-bit resolution • Video signal processing • Sampling rate up to 30 MHz • Digital picture processing

MRB11040W

Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
Contextual Info: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an

a 933 transistor

Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Contextual Info: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •

BFQ163

Contextual Info: Product specification Philips Semiconductors t• —3 3 ~Of5> NPN 1 GHz video transistor PHILIPS INTERNATIONAL D E S C R IP T IO N SbE D ■ BFQ163 7110fi2fei QDMSSfll 7fl2 ■ P H I N P IN N IN G N P N silicon epitaxial transistor in a S O T 5 T O -39 envelope with

DL 711 PHILIPS

Abstract: philips dl 711 LTN211R-10 DISPLAY LTN211R philips ltn211r philips dl 711 delay LTN211R-50 LTN211F-10 LTN211 LXL211-G
Contextual Info: PHILIPS INTERNATIONAL bDE D • 7110fi5b 0D5715E 5T3 ■ PHIN Philips C o m p o nents LTN211 Data sheet status Product specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA MODULE DESCRIPTION The LTN211 is a 5 x 7 dot, 16-character, 2-line dot matrix

fm variable capacitor

Abstract: AM deMODULATOR AM DEMODULATOR USING PLL L9453 IMA11 FM PLL pll fm demodulator SIEMENS saw filter S028 SDIP32
Contextual Info: INTEGRATED CIRCUITS SHEET TDA9812 Multistandard VIF-PLL and FM-PLL/AM demodulator Preliminary specification File under Integrated Circuits, IC02 1995 Mar 21 Philips Semiconductors PHILIPS PH ILIPS 7110fiEb o o a a w 74T Philips Semiconductors Preliminary specification

BDV67DF

Abstract: BDV67CF BDV67B BDV67BF MC3774 BDV67AF NPN pnp MATCHED PAIRS BDV67C
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of issue December 1990 NPN Darlington power transistors PHILIPS INTERNATIONAL I_ _ I 5bE m I 7110fi2b 00433=16 33T B P H I N 1 ^ 3 3 -2 ^ P IN N IN G - S O T 1 9 9

TDB 723

Abstract: IS-345 ADPCM D 711 N 65 T PCD5032 PCD5040 S028
Contextual Info: PHILIPS INTERNATIONAL fc.7E D • 7110fiEb DDt,Slb3 ^3T ■ Philip» Semiconductors RF Communications Products PHIN Preliminary specification ADPCM codec for digital cordless telephone PCD5032 ADPCM CODEC for Digital Cordless Telephone The PCD5032 is a CMOS device designed for use in Digital European Cordless Telephone

BUK436-60A

Abstract: BUK436-60B buk436 7N11 V6-S
Contextual Info: PHILIPS INTERNATIONAL b5E » • 7110fi2b 00b3fl^l 3>^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

74ABT652A

Abstract: 74ABT652AD 74ABT652ADB 74ABT652AN 74ABT652APW
Contextual Info: INTEGRATED CIRCUITS 74ABT652A Octal transceiver/register, non-inverting 3-State Product specification 1995 Feb 06 IC23 Data Handbook Philips Semiconductors PHILIPS PHILIPS 7110fi2b 00û7fln ÛÛT • ^ This Material Copyrighted By Its Respective Manufacturer

transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Contextual Info: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching

LTN221R-10

Abstract: lcd ltn LTN221F-10 lcd ltn221 philips ltn221r LTN221
Contextual Info: PHILIPS INTERNATIONAL bOE » • 7110fi2b 0057132 1MB « P H I N Philips Components Data sheet Product specification status LTN221 Liquid crystal display 7^ / 3 ? date of issue July 1990 QUICK REFERENCE DATA MODULE DESCRIPTION The LTN221 is a 5 x 7 dot, 20-character, 2-line dot matrix

Contextual Info: TIP135 TIP136 TIP137 PHILIPS INTERNATIONAL SbE D • 7110fiSb 0G43SÖÜ Tbl ■ P h T n r - 3 3 ' 3 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circuit fo r audio output stages and general

5142T

Abstract: TDA5142T
Contextual Info: INTEGRATED CIRCUITS TDA5142T Brushless DC motor drive circuit Product specification Supersedes data of March 1992 File under Integrated Circuits, IC11 June 1994 Philips Semiconductors PHILIPS 7110fi£b 0 0 7 3 7b l L>7b PHILIPS Philips Semiconductors Product specification

BLY92C

Abstract: mfc capacitor philips
Contextual Info: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­

BDT96

Abstract: BDT94 BDT92 BDT95 BDT91 BDT93 NPN MATCHED PAIRS BDT92-BDT94
Contextual Info: BDT92 BDT94 BDT96 A . PHILIPS INT ERN AT IO NAL SbE D • 7110fi2b 0043332 447 ■IPHI N T-33-2/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio outpu t stages and general am plifier and switching applications.

BUK552

Abstract: BUK552-60A BUK552-60B T0220AB 42e0 TSLA
Contextual Info: PHILIPS INTERNATIONAL b SE ]> B 7110fiSb 00b421b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

BFQ254

Abstract: BFQ234 UBB692 sot172a3
Contextual Info: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,

SN40

Abstract: edal 4l PCFB TOP3 package 60C51 80C51 PCB80C851-2-16P PCB80C851-2-16WP PCB83C851-2P PCB83C851-2WP
Contextual Info: 5bE D PHILIPS INTERNATIONAL • 7110fiSb 003^103 b^S H P H I N Philip* S em iconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller with on-chip EEPROM DESCRIPTION FEATURES The Philips 80C851/83C851 is a high-performance microcontroller fabricated

M3055

Abstract: BYT230PIV600 m3054 BYT230PI-600 BYT230PIV D8403 IEC134 sot-227a byt230piv 600 BYT230PIV-600
Contextual Info: BYT230PIV600 to 800 PHILIPS INTERNATIONAL Sb E ]> • 7110fi2b O O M l B O b S70 « P H I N ULTRA FAST-RECOVERY DOUBLÉ RECTIFIER DIODES T'03~n Glass-passivated, high-efficiency epitaxial rectifier diodes in ISOTOP envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery characterisitc.

how to interface microcontroller optocoupler

Abstract: b08 optocoupler all tda audio circuit diagrams TDA1315H C200 E008 FS48 SAA7310 Z/tvs e029
Contextual Info: IN TEG R A TED C IR C U ITS T D A 1315H Digital audio input/output circuit DAIO Objective specification Supersedes data of M ay 1994 File under Integrated Circuits, IC01 D ecem ber 1994 Philips Sem iconductors PHILIPS P H ILIP S 7110fi5fc> O D flb in s ib

BUK445

Abstract: BUK445-60A BUK445-60B T-40
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110fi2b OOba^ûb ^QT • R H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In

Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fiEb 00442^0 ÜSS « P H I N Philips Components Data sheet status Product specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BDT96

Contextual Info: BDT92 BDT94 BDT96 PHILIPS INTERNATIONAL SbE D • 7110fi2b 0043332 447 ■ P H I N T-3J-Z1 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications.