70570 Search Results

photodiode BPW50

Contextual Info: SbE D • ^70570 0007DSS 405 H Z E T B S EM IC O N D U C TO R DICE \” 0 \ ZETEX SEMICONDUCTORS PHOTOTRANSISTORS/PHOTODARLINGTON Dice type Description ZM100 Photodarlington ZM110 Phototransistor ZM210 Phototransistor V CEO V CBO V ebo V V 35 35 35 35 35 35

427E-8

Abstract: ZN427E-8
Contextual Info: ZE TE X INC =iS D • = ^ 70570 OODSTbT 4 95D 0 5 9 6 9 Microprocessor compatible 8-bit successive approximation A-D converter * S 7 ' / o ^ o 8 ' ZN427E-8 ZN427J-8 FEATURES DESCRIPTION • The ZN427 is a 8 -bit successive approximation converter with three-state outputs to permit

IRF50

Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
Contextual Info: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ZVN3306

Abstract: ZETB ZVN3306A ZVN3306B ZVN3306E ZVN3306F F150 SOT23 5 ZVN33 a/ZVN3306
Contextual Info: bOE P ^70570 • N-Channel enhancement mode vertical DMOS FET 0 0 0 7 Ô5 1 017 I I Z E T B Z ET EX SEMICONDUCTORS ZVN3306 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

201 ferranti

Contextual Info: ZETEX S E M I C O N D U C T O R S TSD D ^70570 0005^5 4 • ZETB 950 05695 T - 3 =? - o ? Z V N 2535 N-channel enhancement mode vertical DMOS FET i FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

K 3911

Abstract: n3220
Contextual Info: ' ZETEX SEMICONDUCTORS U U. I *aa •iSD D ^70570 0 0 0 5 7 1 e 3 ■ ZETB 95D 0 5 7 1 9 T-39-11 N-channel enhancement mode vertical DMOS FET ZV N 3220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

b675

Abstract: VN2220
Contextual Info: ZETEX S E M I C O N D U C T O R S =1^70570 D O D S b ô S 1 • ZETB IS» D 95D 0 5 6 8 5 7 - 3 ^ 0 ? N-channel enhancement mode vertical DMOS FET ZV N 2220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

G296

Abstract: ZVP2120
Contextual Info: ZETEX SEMICONDUCTORS ‘Ì S D V ^70570 □ D D S 7 ci3 M • ZETB 95D 0 5 7 9 3 T ' 3 ? ' 2 5 P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: SbE D • ^70570 D DD 7D 3ti Eb2 « Z E T B BPW SERIES ZETEX SEMICONDUCTORS SILIC O N PIN PHOTO D IO D ES " F 4 l~ A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection

BF391

Abstract: DD07EGG
Contextual Info: bOE D • ^70570 DD07EGG IbT ■ Z E T B ZETEX SEMICONDUCTORS NPN Silicon Planar High Voltage Transistors BF391 BF392 BF393 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low

Contextual Info: 5bE D • ^70570 GOGbTH? bflT ■ Z E T B E-LINE DIODE SPECIFICATIONS S C H O T T K Y BARRIER DIODES ZETEX T - c n - i^ SEMICONDUCTORS T h e se de v ice s have a high breakdow n voltage and ultra fa st sw itc h in g capabilities. R.F. applications in clu d e low n o ise m ixers, large and sm all signal detectors, lim iters and discrim inators. A p p lica tio n s

ZVN0120A

Abstract: G113 I6629 ZVN0120 ZVN0120B ZVN0120L G-118
Contextual Info: ZE TE X S E M I C O N D U C T O R S » •^70570 OOOSbOT 7 M Z E T B 95D 0 5 6 0 9 D I r - 3 ? v / N-channel enhancement­ mode vertical DMOS FET ZVN 0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZVN2110

Abstract: Zetex dmos ZVIM2110 ZVN2110B ZVN211 F-127 ZVN2110A ZVN2110C ZVN2110E F131
Contextual Info: J> bOE ^70570 • ZETEX 0007027 6 TÔ I Z E T B —I SEMICONDUCTORS N-channel enhancement mode vertical D M O S FET ZVN 2110 F EA T U R E S • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: ^70570 IS» D ZETE X S E M I C O N D U C T O R S i_ _ ZVP0120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling

458A

Abstract: N458
Contextual Info: TS ZE TE X INC D. ^70570 OODblûb T 95D 06 186 D - T 'S 8 - o - 7 ZN458, ZN 458A ZN458B 2 .4 5 V precision reference regulator FEATU RES • • • • • • • Guaranteed 5 m V maximum deviation over full temperature range Low temperature coefficient 0 .0 0 3 % /°C

Contextual Info: ZET EX S E M I C O N D U C T O R S ‘iSD D ^70570 D 0 D S 711 *\ • ZETB 95D 05711 N-channel enhancement mode vertical D M O S FET ZV N 321 0 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

ZN426E

Contextual Info: TS ZE TE X INC D =1^70570 0 Ü 0 S Ö 7 7 T 95D 05877 T-51-09-08 ZN426E-8 ZN426J-8 8-bit monolithic D-A converter FEATURES DESCRIPTIO N • • The ZN426 is a monolithic 8-bit D-A converter • • • • • • ± Î6LSB linearity error Guaranteed monotonie over the full

znp100

Abstract: ZNP102
Contextual Info: 5bE ]> • ^70570 M S SERIES D G D 7 D 3 4 7flD « Z E T B ZETE X s e m i c o n d u c t o r s SILICON M E S A PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to large active area for general purpose use.

Contextual Info: übE J> m ^70570 0GD7D21 022 BIZETB SEMICONDUCTOR NETWORKS ST A N D A R D PRODUCTS - SILICON PLANAR Q UAD T R A N SISTO R S Pin Configuration ZETEX SEMICONDUCTORS n-p-n 1 T O t£ L r- -JRfl N-channel Oj S2 - U t * ,- ' Z 4 - p-n-p &2 U n r o - n n 1_A_1 ­

Contextual Info: bOE D • ^^70570 000712^ 551 « Z E T B ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2120 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: • ^70570 OOOTìbl 721 ■ NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - MARCH 94_ FEATURES * 100 Volt VCE0 * 2 Am ps continuous current * Low saturation voltage * Ptot= 1 Watt REFER TO ZTX653 FOR GRAPHS ABSOLUTE M A X IM U M RATINGS.

ztx214 Transistor

Abstract: 2N3904 70570 BC415P 2n4123 transistor ZTX109 DSAIH000142303. transistor 2N5210 BS3934
Contextual Info: ZETEX SEMICOND UCT ORS IbE D • ^70570 GGObam 5 ■ ZETB E-LINE SPECIFICATIONS ~ ^ „ I - c °l audio pre-amplifiers as well as universal applications The transistors on this page are characterised for low noise, low level amplification and are ideally suited for

t5d diode

Abstract: T5D SOT23 zetex zvn2206 package details
Contextual Info: ZETEX SEMICOND UCTORS TSD ^70570 D □DQSbb'i 3 • ZETB 95D 0 5 6 6 9 N-channel enhancement mode vertical DMOS FET ZVN2206 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance