ZVN33 Search Results

ZVN3320

Abstract: ZVN3320A ZVN3320F WOS78 ZVN3320B 200v 100mA mosfet
Contextual Info: bGE D • *n7D57fl DDD7flb7 434 ■ Z E T B _ , ZETEX S E M I C O N D U C T O R S N-channel enhancement mode vertical DMOS FET ZVN3320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability •

ZVN3306F

Abstract: ZVP3306* datasheet GS 393 ZVP3306F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

VN10LP

Abstract: zvn330 ZVN3306A
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LP ISSUE 2 – NOVEMBER 2005 FEATURES * 60 Volt VDS * RDS on =5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT

BS170P

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P IS S U E 2 - S E P T 93 FE A T U R E S * 60 Volt V DS * R D S c n r5 a REFER TO ZVN3306A FOR G RAPH S ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current a tT amb=25°C

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVP3310F Q FEATURES * 100 V o lt VDS * R o s to v a COM PLEM ENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE U N IT -100 V 75 rrsA -1.2

w2s sot23

Abstract: ML SOT23 FET SOT23 60V ZVN3306F ZVP3306F
Contextual Info: SOT23 P-CHANNEL ENHANCEMENT ZVP3306F MODE VERTICAL DMOS FET ISSUE 3- JANUARY I L 1996 FEATURES . 60 Volt Vr>s . Ro;, ,=14 2 s D PARTMA13KING DETAIL COMPLEMENTARY - ML G TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM _ RATINGS. PARAMETER [Drain — Sc, urce (;ontl~luuus

ZVN3310F

Abstract: F11 SOT23 DS371 SS50 SS-50 SS501
Contextual Info: ZVN3310F SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET P A R T M A R K IN G D ETA IL - ZVN3310F - M F ABSOLUTE M AXIM UM RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25‘C Pulsed Drain Current Gate-Source Voltage

Contextual Info: A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • 100 10 VDS V RDS(ON) (Ω) Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – DECEMBER 1995 FEATURES * 200 Volt VDS * RDS on = 25Ω ZVN3320F ✪ S D G PARTMARKING DETAIL – MU SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200 V Continuous Drain Current at T amb =25°C

T092

Abstract: ZVN3306A
Contextual Info: N-CHANNEL ENHANCEMENT ZVN3306A MODE VERTICAL DMOS FET I ISSUE 2- MARCH 94 1 FEATURES * 60 Volt VD~ * RD~On,=5Q o G ABSOLUTE MAXIMUM PARAMETER I RATINGS. SYMBOL — Drain-Source Voltage —. — Continuous Drain Current~amb=250C ———. Pulsed Drain Current

ZVN3306

Abstract: ZETB ZVN3306A ZVN3306B ZVN3306E ZVN3306F F150 SOT23 5 ZVN33 a/ZVN3306
Contextual Info: bOE P ^70570 • N-Channel enhancement mode vertical DMOS FET 0 0 0 7 Ô5 1 017 I I Z E T B Z ET EX SEMICONDUCTORS ZVN3306 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ZVN0106A

Abstract: ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B
Contextual Info: « » W ¡2 » « EH a > o ® > 8 9 P18 ! ZVN3206L 14A, 0.150 8 I I i ! ZVN3306A I0S17O VN'OLI 0.27A, 50 ZVN1306A 0.2A, 100 8 ZVP0108B 0.6A, 80 ZVP1308B 0.25A, 200 ZVP0108A 0.23A. 8 0 ZVP1308A 0.14A, 200 ZVN0108L 1.5A, 4 0 ZVN1308B 0.5A. 100 ZVP2208B 1.5A, 1 6 0

zvp3306f

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996_ ZVN3306F _ FEATURES * R D S o n r 5 Q * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL • ZVP3306F G MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -OCTOBER 1995 ZVP3310F O FEATURES * 100 V o lt V DS * RDS,on =20n CO M PLEM ENTARY TYPE - ZVN3310F PAR TM ARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e

TR15V

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 60 Volt V,DS ^DSIonr REFER TO ZVN3306A FOR G R A P H S ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Drain-Source Voltage VALUE UNIT VDS 60 V Continuous Drain Current at Tamb=25°C b 270

ZVN330

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - FEB 94_ FEATURES * 60 V olt VDS * fW rS n REFER TO ZVN3306A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT VDS 60 V Continuous Drain Current at Tamb= 25°C

ZVN3320F

Abstract: ZVN3320
Contextual Info: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360

Contextual Info: PLESSEY SEMICOND/DISCRETE □3 7 N-channel enhancement mode vertical DMOS FET dF | 722G533 □00b73fl 3 • ?- a s - ZVN3310F A B SO LU T E M AXIM UM R ATIN G S Parameter SO T-23 Symbol Unit V DS 100 V 'd 0.1 A 2 A ±20 V Drain-source voltage Continuous drain current at T A = 2 5 °C

ZVN3320F

Contextual Info: PLESSEY SENICOND/DISCRETE "□3 7220533 PLESSEY SEMICOND/DISCRETE DE~| 7SE0S33 DDDb744 T 03E 06744 N-channel enhancement mode vertical DMOS FET D ZVN3320F ABSO LUTE M A X IM U M RATINGS Param eter S O T-23 Sym bol D rain-source vo lta g e VDs C o n tin u ou s drain c u rre n t at T A = 2 5 °C

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN3306F ISSUE 3 – JANUARY 1996 FEATURES * RDS on = 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL - S D ZVP3306F MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

ZVN3310A

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN3310A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on = 10Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 100 V Contin uo us Drain Cur r en t at T am b=25°C

Contextual Info: ZVN3315B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)150 V(BR)GSS (V) I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC)

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ZVP3306F ISSUE 3 -JAN UARY 1996 FEATURES * 60 V o lt Vos * Rosionr1^ s PARTM ARKING DETAIL - M L g CO M PLEM ENTAR Y TYPE - ZVN3306F SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e

VN10LP

Abstract: ZVN3306A
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LP ISSUE 1 – FEB 94 FEATURES * 60 Volt VDS * RDS on =5Ω D G REFER TO ZVN3306A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE 60 UNIT V Continuous Drain Current at T amb = 25°C