ZVP3310F Search Results

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVP3310F Q FEATURES * 100 V o lt VDS * R o s to v a COM PLEM ENTARY TYPE - ZVN3310F PARTMARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE U N IT -100 V 75 rrsA -1.2

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -OCTOBER 1995 ZVP3310F O FEATURES * 100 V o lt V DS * RDS,on =20n CO M PLEM ENTARY TYPE - ZVN3310F PAR TM ARKING DETAIL - MR ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e

ZVN3310F

Abstract: SOT23 N-CHANNEL FET 100V ZVP3310F DSA003736 3tf5
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 100 Volt VDS * RDS on = 10Ω ✪ COMPLEMENTARY TYPE PARTMARKING DETAIL - ZVP3310F MF ZVN3310F S D G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

MF SOT23

Abstract: ZVN3310F partmarking 6 C SOT23 N-CHANNEL FET 100V
Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 ZVN3310F O_ FEATURES * 100 Volt VDS * RDS oni=10“ CO M PLEM ENTARY TYPE • ZVP3310F PARTMARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Continuous Drain Current at T amtj=25°C

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT M ODE VERTICAL D M O S FET ISSUE 3 - OCTOBER 1995 FEATURES * 100 Volt VDS * O_ R DS on = 1 0 ß C O M PLEM EN TA RY TYPE PARTM ARKING DETAIL - ZVP3310F MF SOT23 ABSOLUTE MAXIM UM RATINGS. VALUE UNIT V ds 100 V Continuous Drain Current at Tamtj=25°C

P-Channel FET 100v

Abstract: PARTMARKING mr ZVP3310 zvp3310f ZVN3310F DSA0037411 zvp331
Contextual Info: ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -9V -8V -7V -6V -0.2 -5V -4V -6 Drain Source -0.4 -8 -4 ID= -0.3A -2 -0.15A -0.075A -2 -4 -6 -8 -10 V I - Drain Current Amps -0.6 -10 -6 -8 -10 Voltage Saturation Characteristics Saturation Characteristics

Contextual Info: ZVP3310F Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)75m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)330m Minimum Operating Temp (øC)-55õ

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -O C T O B E R 1995 ZVN3310F O _ FEATURES * 100 V o lt V DS * R D S o n r1 0 ii C O M PLEM EN TAR Y T Y P E - ZVP3310F PARTM ARKING DETAIL - MF SOT23 ABSOLUTE MAXIMUM RATINGS.

DCT15EFD-U45S004

Abstract: ceramic capacitor syfer 1u 25V 113k vishay crcw0805 ZVP3310 C2012X5R1C105K MMSD4148 CRCW0805 SOT23 N-CHANNEL FET 100V DCT15EFD
Contextual Info: National Semiconductor LM5025 Power Applications Design Center, Americas May 2007 1.0 Design Specifications Inputs Output #1 VinMin=30V Vout1=15V VinMax=60V Iout1=1.5A 2.0 Design Description This circuit uses the LM5025 voltage mode PWM controller with complementary gate drives to implement a high-efficiency single-ended active clamp forward converter.

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

zvp3310

Contextual Info: Electrical Specifications Subject to Change LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

Contextual Info: A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • 100 10 VDS V RDS(ON) (Ω) Description and Applications This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

schematic diagram 48v battery charger lead acid

Abstract: 2sd2704
Contextual Info: LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal IN to VBAT n Automatic MPPT for Solar Powered Charging

B558

Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

ZVP3306F

Abstract: ZVP3310F DS400
Contextual Info: ZVP3306F SOT23 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET PARTM ARK1NG DETA IL - ZVP3306F - M L ABSOLUTE M A X IM U M RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25'C Pulsed Drain Current Gate-Source Voltage M ax Power Dissipation @ Tamb=25"C

ZVN3320F

Abstract: ZVN3320
Contextual Info: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a