635R Search Results

Contextual Info: Y sa m liec HS-2000-1 •' * i u For complete specifications: see www.samtec.com/design/ pdf_reports.asp; select EQCD Plating: Au over 50p" 1,27pm Ni ALSO AVAILABLE Aflpcnjpu G,635rdm 0,5mmpitch JyPCBteol Choice oi 50L1 & 7SS1 matched i~'pedan, systems Ca# Samtec.

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

2N2646 TO-92

Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

2N2800

Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A
Contextual Info: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5

N3020

Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220

2N4121

Abstract: 2N5139 2N4917 2N3639 2N4122 2n5138 016 2N4062 2N5383 2N5857 2N5138
Contextual Info: CENTRAL SEMICONDUCTOR = tï 1989963 CENTRAL SEMICONDUCTOR * 1 DE | . JT.„. DDDDS13 b 61C 00213 - //-°/ PNP EPOXY - SW ITCHING A N D G ENER AL PURPOSE (Cont'd. V cb V CE V eb hFE at •c VCE V V V min max mA V V 2N4060 2N4061 2N40622N4121 2N4122 30 30

MPS-A42

Abstract: MPS-A43 K MPS a42
Contextual Info: 19 8 9 9 6 3 /CENTRAL’S E M ICONDUCTOR" ó 1C 00232 • T ~ ^ &mSïfiâ bï g@esilg@6n^ stei? @g*p. de| MPS-A42 central g@BiiIe®si§lye£@r €®rp. C e n tra i s s m le o n c fu e to r C orp. ~ / 7 0000535 d MPS-A43 NPN JP SILICON HIGH VOLTAGE TRANSISTORS

CQ920

Abstract: CQ92A CQ92B CQ92D CQ92F CQ92M cbr3-p
Contextual Info: n a ^ t a _CENTRAL S EM IC ON DUCTOR dooostt ^ T ~ T - ¿ s '- // CQ92F CQ92A CQ92B CQ92D CQ92M gGEmiËSQÊBgSP&û ^ @@^3* s@6û^@@nG9QBefior e @ p p . €@Bifrcal SeniBeO BItiU C tO r C S’p . central semiconductor Corp. TRI AC 0.8 AMPS 50 THRU 600 VOLTS

CR3U-005

Contextual Info: l?g?63 CENTRAL' SEMICONDUCTOR ~ >1 61C 00172 T - 0 3 -1 5 DE l D0DD17g 7 | c e n t r e il CR3U seBisieonsiMetoF e@rp. Central seiüieaitäyctor Corp. central Semiconductor Corp. SERIES ULTRA FAST RECOVERY RECTIFIER CASE 103 145 Adams Avenue Hauppauge, New York 11788

CS55AZ

Abstract: CS55BZ CS55DZ CS55FZ CS55MZ KSH 123 scr 209
Contextual Info: central semiconductor ]>EjnflTib3 DDDD3D7 CS55AZ CS55BZ CS55FZ CS55DZ CS55MZ e &aGb:eJ Stop.U£Ë^5BS3 Suj@? ©Qirpo £t>^3U gdBMBieeoBcgasefQE3 e@ i?g . GSBtâral Ê©raS(g@Bi2fiysÊ@p C e ^ p . J P SCR Central semiconductor Corp. 0.8 AMPS 50 THRU 600 VOLTS

t1p117

Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C

IN4702

Abstract: 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4698 1N4699 1N4700
Contextual Info: 1 9 8 9 9 6 3 CEN TRAL : : V ~T Ï g ngi?ga9 g KHS@©BBe3e5gfi@E? @ ® r ; p o '~ f -U '0 '7 61C 0 0 2 7 7 SEM ICONDUCTOR DE | l'iôT' it .B 00 00 57 7 | 1NA678 THRU 1N 47 H €©&a€ffS9B LOW LEVEL SILICON ZENER DIODE C@iifral Ê @ ü îis@ B îe isg st csr

CR160

Abstract: CR160-005 CR160-020 CR160-040 CR160-060 CR160-080 CR160-100 CR160-120
Contextual Info: CENTRAL SEMICOND UCT OR Li1 D □□□□ita o] r "I T - à t- ó / s> 160 Amperes General Purpose Silicon Power Rectifier L.1 de J ooooibo o | O CR160005 CR160oto CR160020 CR160- CR160040 060 CR160080 CR160100 CR160120 VRRM<v°«s 50 100 200 400 600 800

Z6.8B

Abstract: Z12B Z9.1B DIODE Z8.2B Z6.2B C1Z10B C1Z11B C1Z12B C1Z13B C1Z14B
Contextual Info: CENTRAL SEMICONDUCTOR n a “n t a qddqeöi 1 WATT ZENER DIODE CSBafiFi9l r S0oiiie@si&]eigt'@r €@pp, S in fr a l 6 .2 -2 0 0 VOLTS, 5% semlcpitäluetor Sorp, AXIAL LEAD D015 EPOXY CASE Central semiconductor Corp. C1Z 6.2B SERIES 145 Adams Avenue Hauppauge, New York 1 17 88

IN5374B

Abstract: in5374 IN5373B C3Z10B C3Z11B C3Z12B C3Z47B C3Z50B Zener Diode 1N5368B C3Z52B
Contextual Info: CENTRAL CENTRAL TYPE NO. SEMICONDUCTOR , 3 Watt Zener Diode • 5% Tolerance • Case C Zener Voltage Vz@lz Test Current Iz Zener Impedance Zz Maximum Zener Current IZM mA Volts mA Ohms C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B 6.2 6.8 7.5 8.2 9.1 75 75 75 75

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. S T F - H 4 0 1 IGYID A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #11149. ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C lf= 20m A PARAMETER RED GREEN YELLOW UNITS PEAK WAVELENGTH FORWARD VOLTAGE TYP. 635 2.0 56 5

DD3150

Abstract: 316 bcg 563-HH-3421-BC A42 BF 331 531002b00000g to220 mica 1591-TSBK NG-9512E 131-6 wj 78 1554d
Contextual Info: ENCLOSURES AND THERMAL Plastic Enclosures Altech. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1866, 1867 Bud . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1868, 1869, 1870, 1871, 1872, 1873 Bulgin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1874

2N3643 TO-105

Abstract: 2N3566 2N3569 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N3568 central
Contextual Info: T 1989963 "CENTRAL SEMICONDUCTOR 61C 00210 TËT| 1l i m b 3 QDD0210 D | L .1 NPN EPOXY - SWITCHING AND GENERAL PURPOSE VCB V CE V EB hFE at *C V V V min max mA 2N2711 2N2712 2N2713 2N2714 2N2923 18 18 18 18 25 18 18 18 18 25 5 5 5 5 5 30 75 30 75 90 90 225

2n11

Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
Contextual Info: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10

PCH200EG

Abstract: pch200ER PC200TWRG1 PC200TR5
Contextual Info: a?E j> LEDTRONICS üeiTiimn LEDTRONICS,Inc 5453705 0000320 7 • -"P 4 /-Z 2 » RIGHT ANGLE MOUNT- DIFFUSED £ CLEAR T O 5mm PC BOARD LEDs Model PC19Q/200 HI-EFF/ULTRA/BIC0L0R5/RESIS FEATURES: X RIGHT ANGLE MOUNT AT 0.25" CEN TERS. S ID E STACKABLE X CHOICE OF LED S: STD RED, H I-E F F IC , ULTRA TO 3000MCD,

cr1120

Abstract: cr108 CR1-005 CR1-010 CR1-020 CR1-040 CR1-060 CR1-080 CR1-100 CR1-120
Contextual Info: 1989963 CENTRAL A SEM ICON DUCTOR bï 1 1.0-2.0 Amperes 61C dF| 0000153 00153 T - O f " 3 jp General Purpose Silicon Power Rectifier o V RRM volts> C R 1- C R 1- C R 1- C R1- C R1- C R 1- C R1- C R 1- 005 010 020 040 060 080 100 120 C R 2- C R2- C R2- C R2-

MJ12005

Abstract: CBR30
Contextual Info: 61C 00248 •/ f - 1 3 - / 3 1989 963 CENTRAL ’SEMICONDUCTOR 0000E4Ö SlìtE3 ! °1 §@g3B9@@närae&@? 3 MJ12005 S e s r iic e & is iis e f ® ! ? c e r g » C e n tra l Z> NPN SILICON TRANSISTOR sattilc^iidssetor Corp. Central semiconductor Corp.