600MLL Search Results

Am27C291

Contextual Info: ADV M IC R O 14E D I MEMORY 0 5 S 7 S a a 0 0 2 7 7 0 0 _4 | -z s A m 2 7 C 1 9 1 /A m 2 7 C 2 9 1 16,384-Bit 2048x8) High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed <25 ns)/Low-Power (60 mA) C M O S E P R O M Technology

Contextual Info: AT27C01 O/L Features • • • • • • • • • • Fast Read Access Time -100 ns Low Power CMOS Operation 100 |iA max. Standby 25 mA max. Active at 5 MHz AT27C010L 40 mA max. Active at 5 MHz (AT27C010) Wide Selection of JEDEC Standard Packages Including OTP

Contextual Info: AT27LV1024 Features • • • • • • • • • • • Wide Power Supply Range, 3.0 VDC to 5.5 VDC Compatible with JEDEC Standard AT27C1024 Low Power CMOS Operation 100 |iA max. Standby 33 mW max. Active at 1 MHz for Vcc = 3.3 VDC 165 mW max. Active at 5 MHz for Vcc = 5.5 VDC

Contextual Info: FUJITSU MICROELECTRONICS 23E D • 374=171=5 000*1302 O ■ F U JITSU April 1988 Edition 1.0 'T :4 k -iV Z 7 256K BIT 32,768 X 8 CMOS ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY Tho Fujitsu MBM28C256 Is a high speed read-only static memory that Is electrically

FUJITSU MB8464A

Abstract: MB8464A-10-W mb8464a MBB464A 990kc MB8464A-15-W
Contextual Info: FUJITSU M I C R O E L E C T R ON I C S 23E D • 3 7 4 1 7 b 2 '0007^55 5 ■ T -4 k -2 3 > - 2 , October 1989 Edition 1.0 _ DATA S H E E T FUJITSU - MB8464A-10-W/-15-W CMOS 64K-BIT LOW POWER SRAM 8.192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION

KM23C4001

Contextual Info: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using

27c040-10

Abstract: 27C040-12 1S84 8332 memory 27C040-15 SMJ27C040
Contextual Info: SMJ27C040 4194304-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS046A- NOVEMBER 1992 - REVISED JUNE 1995 J PACKAGE Organization . . . 512K x 8 Single 5-V Power Supply Industry Standard 32-Pin Dual-in-line Package All inputs/Outputs Fully TTL Compatible

CQCC2-N28

Abstract: 82S181A 1024 x 4 prom GDIP1-T24
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I

fujitsu 1988

Contextual Info: FU JITSU 256K CM O S ELECTRICALLY ERASABLE PROM MBM28C256 April 1988 Edition 1.0 256K BIT 32,768 x 8 CMOS ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM28C256 is a high speed read-only static memory that Is electrically erasable and reprogram mable. The device contains 262,144 reprogrammable bits

Contextual Info: PRELIMINARY KM23V16101A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 X 8 bit organization • Fast access tim e: 200ns max.) • Supply voltage: single+3V or +3.3V • Current consumption Operating: 25 mA(max.) at VCC=3.0V± 0.3

KM23C4001b

Abstract: mask rom TA-51
Contextual Info: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization

KM681000

Abstract: A12E
Contextual Info: SAMSUNG SE MICONDUCT OR INC 23E D • 7 cit>Mm2 0000304 5 ■ Advanced Information CMOS SRAM KM681000/KM681000L T - - ^ ' 2 3 1 2 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 70, 80, 1 0 0 ,120ns max. • Low Power Dissipation

IC 2030 PIN CONNECTIONS

Contextual Info: LH531VOO FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K x 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P VIEW s O E ^ Ö li/ D C C • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)

PLUS105-45N3

Abstract: PLUS105-45N
Contextual Info: Philips Components-Signetics Document No. 853 -1 3 51 ECN No. 99570 Date of Issue M ay 9, 1990 Status Pro du ct S pecification P L U S 10 5 -4 5 Programmable logic sequencer 1 6 x 4 8 x 8 Program m able L ogic D evices PIN CONFIGURATIONS DESCRIPTION FEATURES

Contextual Info: PRELIMINARY CMOS 16M 2M x 8/1M x 16 MROM With Page Mode L H 5 3 B 1 6 P 0 0 FEATURES • 2,097,152 words x 8 bit organization (Byte mode) 1,048,576 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) Page mode: 50 ns (MAX.) PIN CONNECTIONS

Contextual Info: LH5496/96H FEATURES • Fast Access Times: 15 720/25/35/50/65/80 ns CMOS 5 1 2 x 9 FIFO PIN CONNECTIONS 28-PIN PDIP TOP VIEW • Full CMOS Dual Port Memory Array • Fully Asynchronous Read and Write • Expandable-in Width and Depth W C 1• 28 —I ^ c c

Contextual Info: LH534600B CMOS 4M 512K x 8/256K x 16 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Power consumption:

Contextual Info: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion

Contextual Info: High Performance 10 24x8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Featu res/B en efits Description • 30-ns m aximum access time T h e 53/63S881 a nd 5 3/63S 881A are 1024x8 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t PNP in p u ts , fu ll S c h o ttk y c la m p in g ,

AT27C010L-20

Abstract: AT27C010-20PC AT27C010-15DM at27c010-12dc
Contextual Info: AT27C010/L Features • • • • • • • • • • Fast Read Access Time -100 ns Low Power CMOS Operation 100 nA max. Standby 25 mA max. Active at 5 MHz AT27C010L 40 mA max. Active at 5 MHz (AT27C010) Wide Selection of JEDEC Standard Packages Including OTP

Contextual Info: LH538P00B FEATURES • 1,048,576 words x 8 bit organization Byte mode 524,288 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 (iW (MAX.) • Static operation • TTL compatible I/O

TAA 293A

Abstract: CY7C smd code LY Q
Contextual Info: CY7C291A CY7C292A/CY7C293A r ' Y P P P ’C jc ; —- SEMICONDUCTOR Reprogrammable 2K x 8 PROM • Direct replacement for bipolar PROMi • Capable of withstanding > 2001V stat­ ic discharge Features • W indowed fo r rep ro g ram m ab ility • C M O S Tor o p tim u m speed/pow er

CXK58257AM-70LL

Abstract: SONY 171 CXK58257AP
Contextual Info: S ony. CXK58257AP/AM -70LLX/85LLX/1OLLX/12LLX] 32768-word x 8-bit High Speed CMOS Static RAM Description CXK58257AP 28 pin DIP Plastic CXK58257AP/AM is 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. This device is suitable

ck-ck

Abstract: PLS105 82S105/BXA 82S105 GDFP2-F28 GDIP1-T28 elevator circuit diagram
Contextual Info: Philips Semiconductors Military Programmable Logic Devices Product specification Field-programmable logic sequencer 16x48x8 82S105 (PLS105) FEATURES DESCRIPTION • Field-programmable (Ni-Cr link) The 82S105 Is a bipolar programmable state machine of the Mealy