55N10 Search Results

STH55N10

Abstract: STW55N10 STH55N10FI gc352 n55a
Contextual Info: 7^5^237 0 04S cî5ti TTfl • S 6 T H _ *57 SGS-THOMSON STH55N1 o/Fl 55N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TH 55N 10 STH55N1OFI STW 55N10 ■ . . . . . ■ . V dss RoS on Id 100 V 100 V 100 V < 0.030 n < 0.030 Q

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: OM55N1ÛNK OM75N05NK OM60N10NK OM75NQ6NK LOW VOLTAGE, LOW R DS on POWER MOSFETS IN A TO-3 PACKAGE 50V And 60V, Ultra Low RDS(on) Power MOSFETs In A TO-3 Package FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge

OM55N10NK

Abstract: OM60N10NK OM75N05NK OM75N06NK
Contextual Info: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

MTM13N50E

Abstract: MTM13N50 40N20 MOSFET IRF250 TM12P10 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e
Contextual Info: TT TMOS TMOS Power MOSFETs Metal Packages — TO-204AA/AE 0 40" 060" TO-204AA CASE 1-07 Table 6 — P-Channel Voss Volts Min 100 RDS(on) ID (Ohms) (Amps) Max TO-204AE CASE 197A-03 Table 7 — N-Channel Device •d (cont) Amps Pd * (Watts) Max VDSS (Volts)

Contextual Info: 55N10NK OM75N05NK OM6ONIONK OM75N06NK LOW VOLTAGE, LOW IN A TO-3 PACKAGE R DS on POWER MOSFETS FEATURES • • • • TO-3 Hermetic Package, .060 Dia. Leads Ultra Low R DS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TX V And S Levels

55n10

Contextual Info: OM55N1ÛSC OM60N10SC OM75N05SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA LOW VOLTAGE, LOW R DS 0n POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V. A n d 1 00 V Ultra L o w RDS(on) P o w e r M O S F E T s In T O -2 54 A n d T O-258 Isolated P a c k a g e s

55n10

Abstract: 75n05 60n10 75N06SA 75n06 OM55N10SA OM55N10SC OM60N10SC OM75N05SA OM75N05SC
Contextual Info: 55N10SC OM60N10SC OM75N05SC OM75N06SC 55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • •

Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62

55N10

Abstract: transistor 60n06 MTM55N08 MTM60N05 60N06 60N05 55N08 55N08/M
Contextual Info: MOTOROLA SEMICONDUCTOR MTM55N08 55N10 MTM60N05 MTM60N06 TECHNICAL DATA D i'signtM -’s D a t a 55 and 60 AMPERE N-CHAIMNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR rDS on = 0 04 0HM 80 and 100 VOLTS These TM OS Power FETs are designed for low voltage, high

60N06

Abstract: motorola mosfet
Contextual Info: MOTOROLA SC XSTRS/R F bf l E T> b 3 b 7 ES4 DOTflbn M O TO R O LA •I SEMICONDUCTOR 55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 55 and 60 A M P E R E N-CHANNEL T M O S POWER FETs N - C H A N N E L E N H A N C E M E N T - M O D E S IL IC O N G A T E

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90

Contextual Info: 55N10SC OM60N10SC OM75NÛ5SC OM75N06SC OM55N1QSA OM75NQ5SA OM75NQ6SA LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, And 100V Ultra Low RDS(on) Power MOSFETs In TO-254 And TO-258 Isolated Packages FEATURES • • • • •

55n10

Abstract: transistor 60n06 60N06 MTM60N06 MTM60N05 MTM55N08 sc 3228 MTM55N10 of 60N06 S0020
Contextual Info: MOTOROLA SC XSTRS/R bflE T> m F b3b7ES4 D O T flb n 0 7 e! • MOTOROLA ■I SEMICONDUCTOR 55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a Sheet 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR