MTM15N40E Search Results

MTM15N40

Abstract: IRF350 MTM15N40E Motorola Case 1-06
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?aSM 00^32=11 3 I MOT b T - ^ 9 ~ / 3 Order this data sheet by MTM15N40E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M T M 15N40 E D esigner's Data Sheet TMOS E-FET High Energy Power FET TMOS POWER FET 15 AMPERES rDS(on) = 0 3 OHMS

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM15N40E TO-3 N-CHANNEL POWER MOSFET ABSOLUTE MAXIMUM RATING: Drain – Source Voltage

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

Motorola transistor 388 TO-204AA

Contextual Info: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

MTM13N50E

Abstract: MTM13N50 40N20 MOSFET IRF250 TM12P10 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e
Contextual Info: TT TMOS TMOS Power MOSFETs Metal Packages — TO-204AA/AE 0 40" 060" TO-204AA CASE 1-07 Table 6 — P-Channel Voss Volts Min 100 RDS(on) ID (Ohms) (Amps) Max TO-204AE CASE 197A-03 Table 7 — N-Channel Device •d (cont) Amps Pd * (Watts) Max VDSS (Volts)

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

MTM12N20

Abstract: MTM15N40 MTM12N06 MTM12N08 MTM12N10 MTM12N18 MTM12P05 MTM12P08 M1M1 MTM20N08
Contextual Info: - 284 - f m £ 4t £ ÏS JK % £ tè Ta=25tï ï Vd s or ? Vd g )]/ (V) Vg s Pd Id * / CH (V) (A) I gss V g s th) I dss * /CH (H O min (nA) Vg s (V) Vd s (V) (m a ) max )d (piA) (V) (V) % W t± fè FD s(o n ,i Vi)S= Vg s (Ta=25tD) Ip(on) Ciss g fs Coss Crss

3203 MOSFET

Abstract: MOTOROLA T3E IM40t AN569 MTM15N40E TMOS power FET motorola mosfet
Contextual Info: MOTOROLA SC XSTRS/R F bfiE » • h3b.7ESM GQTflST3 T32 noTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM15IM40E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed for high voltage, high speed

MTH13N50

Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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