60n02
Abstract: 60N01 60N05 E0C6001 E0C6002 E0C6003 E0C6004 EVA6S32R lcd cable 30 pins connector 40 pins 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM
Contextual Info: CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S5U1C62N51E1 Manual Evaluation Board for S1C60N01/60N02/60N05/62N51/6S3N7 Rev.1.0 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.
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60n05
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary Power MOSFET 60A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.
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50n06
Contextual Info: OM60N06SA 60N05SA OM50N06ST OM50N06SA QM50N05SA QM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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50N05
Abstract: 60N05 TO-254AA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA TO254-AA
Contextual Info: OM60N06SA 60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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60n02
Abstract: 60N01 E0C6001 E0C6002 E0C6003 E0C6004 PC-9800
Contextual Info: MF844-04 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S5U1C6S3N7D Manual Development Software Tool for S1C6S3N7 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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50n05
Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
Contextual Info: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, SMP50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 60N05 50 0.023 60 SMP50N06
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50N05
Abstract: OM60N06SA OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA
Contextual Info: OM60N06SA 60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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55N10
Abstract: transistor 60n06 MTM55N08 MTM60N05 60N06 60N05 55N08 55N08/M
Contextual Info: MOTOROLA SEMICONDUCTOR MTM55N08 MTM55N10 60N05 MTM60N06 TECHNICAL DATA D i'signtM -’s D a t a 55 and 60 AMPERE N-CHAIMNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR rDS on = 0 04 0HM 80 and 100 VOLTS These TM OS Power FETs are designed for low voltage, high
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60n02
Abstract: 60n05 transistor 60n02 60N01 E0C6001 E0C6002 PC-9800 S1C60N01
Contextual Info: MF944-04 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S5U1C60N01D Manual Development Software Tool for S1C60N01 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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60L02
Abstract: 60n02 OPT0103 60N01 E0C6001 E0C6002 PC-9800 S1C60N02
Contextual Info: MF973-04 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S5U1C60N02D Manual Development Software Tool for S1C60N02 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any
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12N60FI
Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90
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50n05
Abstract: C181 VPS 12g 60N05 OM50N05SA OM50N05ST OM50N06SA OM50N06ST OM60N05SA OM60N06SA
Contextual Info: OM6ONO6SA 60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW R DS on POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDs(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages
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