40N30 Search Results

40N30Q

Abstract: IXYS 40N30Q
Contextual Info: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXYS 40N30Q

Abstract: 40N30Q
Contextual Info: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: n ix Y S HiPerFAST IGBT IXGH 40N30 IXGH 40N30A IXGH 40N30B V CES ^C25 300 V 300 V 300 V 60 A 60 A 60 A V CE sat t», 1.8 V 220 ns 2.1 V 120 ns 2.4 V 75 ns P re lim in a ry d a ta Symbol Test Conditions Maximum Ratings V CES T, = 25°C to 150°C 300 V V CGR

IXTH35N30

Contextual Info: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2

Contextual Info: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 300 V 60 A 300 V 60 A 300 V 60 A VCE sat tfi 1.8 V 220 ns 2.1 V 120 ns 2.4 V 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 300 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

SMD diode b24

Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Contextual Info: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64

ad6v

Abstract: 40N30A 40N30
Contextual Info: HiPerFASTTM IGBT VCES IXGH 40N30 IXGH 40N30A IXGH 40N30B IC25 600 V 60 A 600 V 60 A 600 V 60 A VCE sat tfi 1.8 V 2.1 V 2.4 V 220ns 120ns 75 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

40N30

Abstract: 98536 IXFH40N30
Contextual Info: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MW

Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C

40N30L

Abstract: ixfm40n30
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A

120n60b

Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *

SMD B26

Abstract: SMD L4
Contextual Info: DIXYS v CES Hi PerFAST IGBT ^C25 IXGH 40N30/S 600 V 60 A IXGH 40N30A/S 600 V 60 A IXGH 40N30B/S 600 V 60 A V * CE sat t. 220ns 120ns 75 ns 1.8 V 2.1 V 2.4 V Preliminary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 300 V VCOR Tj

IXFH40N30

Contextual Info: HiPerFETTM Power MOSFETs IXFJ 40N30 VDSS = 300 ID25 = RDS on = V 40 A 80 mW trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

1Bt smd

Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623
Contextual Info: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family

IXFH40N30

Abstract: international rectifier igbt to-247 package
Contextual Info: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 40N30 40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40

IXFH40N30

Contextual Info: IBIXYS HiPerFET Power MOSFETs IXFH 40N30 DSS I D25 RDS on t rr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol v DSS Test Conditions Maximum Ratings T j =25°C to150°C 300 V T j = 2 5°C to 150°C; RGS= 1 Mi2 300 V VGS v GSM Continuous

IXTH35N30

Abstract: IXTH40N30 IXTM40N30
Contextual Info: MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS on 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

12n60c

Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Contextual Info: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM

1M300

Abstract: 40N30 40n30a
Contextual Info: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient

IXFC40N30Q

Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFC 40N30Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM 80 80 V V Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM

Contextual Info: HiPerFASTTM IGBT VCES IC25 IXGH 40N30/S 300 V 60 A IXGH 40N30A/S 300 V 60 A IXGH 40N30B/S 300 V 60 A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 300 V VGES Continuous ±20 V VGEM Transient

IXYS DS 145

Abstract: IXFH40N30
Contextual Info: HiPerFET Power MOSFETs IXFJ 40N30 VDSS = 300 V = 40 A D25 R = 80 mQ DS on trr < 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v DSS Tj =25°Cto150°C v D0R ^ v GS v GSM ' d 25 Maximum Ratings

2QN60

Abstract: ixgh 1500
Contextual Info: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH