40250 TRANSISTOR Search Results

40250

Abstract: small signal transistors
Contextual Info: 40250 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type 40250 Tj 200 hFE max 100 hfe Notes VCBO 50 hFE A 1.5m fT 1.0 Polarity NPN VCEO

2n3054

Abstract: 40250 Transistor 40250 40372 2N6261
Contextual Info: ^£.mi-C.ondu.ctoi Lpioduati, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 UsA 2N3054, 2N6260, 2N6261, 40250, 40572, 40910, 40911 Hometaxial-Base Medium- Power Silicon N-P-N Transistors Rugged Devices for Intermediate-Power Applications in

tpl 280-4

Abstract: ULS2800 ULS2000 ULS2003 ULS2002 IC 2804 ls2000 ULS2022 8DARLINGTON ULS-2004
Contextual Info: INTEGRA TED POUER 02 4825898 im w m D Ë | 40250^0 □□□□2bS □ I N TE G R A T E D POWER R M 82D 0 0 2 6 5 D Darlington Transistor Arrays T E D SEMICONDUCTORS, LTD. Features Description 7 or 8 darlington power drives In single package , 50V or 95V breakdown voltage

LM317 power supply 0.30 V. 20 amp

Abstract: LM217hvK P217A LM217HV LM317T LM217K IP117A 117HV INTEGRATED POWER SEMICONDUCTORS LTD LM317 pin information
Contextual Info: INTEGRATED POWER b? dF J 40250=10 00GQ2Ô4 3 ! i 4825898 _ INTEG R A TED POWER 8 2 0 J 0 2 4. i IN T E G R A T E D $ '2 -3 1.5 Am p Positive Adjustable Regulators R SEMICONDUCTORS , LTD. Features Description Guaranteed 1% output voltage tolerance Guaranteed 0.3% load regulation

bc461

Abstract: BCY39A BCY87 T071 BC461-6 BCY89 BCY70 BS BCY34A BCY56 BC477
Contextual Info: 4ÖE D • 0133107 0DGQ447 RG4 ■ SMLB SEM ELABE SEHELAB L T J> T -Z >.a I BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code BC461-6 BC477 BC477A BC477B BC478 BC478A BC478B BC479 BCW34 BCW35 BCY30A BCY31A BCY32A DCY33A BCY34A BCY39A BCY40A BCY42

PC557

Abstract: bc5588 bc557 siemens bc548 sot23 BC182 BC547 BC648 BC557 SOT23 BC212
Contextual Info: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching C h a ra c te ris tic s T. =25°C M a x im u m R a tin g s VCEO ' c N=NPN Pt fr ^CEX VCBO VCEX mW MHz nA V 200 200 200 ( ' 206" 170 i 70 170; 170 250

Contextual Info: SMALLSIGNAL_ _ TRANSISTORS GENERAL RURROSE •SASES :_ T O - T O - 39 hpg 9 NF Ptfit vCBO 1 VCEO : ^ : vCEsat fT cob CASE ® I a= vces " ! ‘ ’ kfe *C *c =25°C min. ! min. ! ! min.-max

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 70w amplifier 40250 Transistor 40594 40629 Transistor 40538 ic 40538 120w audio power amplifier circuit npn 40872 TA8323
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386

BD282

Abstract: BD285 BD286 BD283 BD284 BD281 B0283 NPN TRANSISTORS LIST BC461 2N5322 complementary npn-pnp
Contextual Info: Sem iconductors Transistors - NPN/PNP Complementary NPN/PNP Complementary Transistors R E FE R E N C E T A B L E Max P toi @ T c = 2 5 'C W Code Polarity BC440 BC460 NPN PNP BC441 BC481 N PN PNP } 10 } 10 BD281 BD282 N PN PNP } BD283 BD284 NPN PNP } BD285

ca3096

Abstract: 40250 Transistor thyristor firing circuits 3096a Transistor Arrays NPN General Purpose Transistor CA3096AE 15 A PNP TRANSISTOR
Contextual Info: CA3096, CA3096A, CA3096C fS î h a r r i s o u SemicoHou »VOR NPN/PNP Transistor Arrays August 1996 Applications Description • Five-independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

AD149

Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3

2n5253

Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
Contextual Info: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321

AD143

Abstract: ad148 ASZ1015 Germanium Power Devices
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20

RCA413

Abstract: RCA1A16 RCA1A10 RCA1B05 BFT19B BFT28 2N6079 rca1e03 2N5415
Contextual Info: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E

2SA1690

Abstract: BCX53 Rohm RXT-A28 2SD2170 2SB1132 2SB1181 2SB1182 2SB1184 2SB1188 2SB1189
Contextual Info: R OH M ESE D CORP Tr • ?Ö 2Ö^ GOGEÒ^ fl ■ T - A l ’ Ol Transistors- • MPT SOT-89 , OPT (DPAK) Types Ty 3 6 MPT 2SB1132 — — Driver — 2SD1760 2SD17S8 — 2S01733 2SD1918 2SD2126 2SD2167 2SB1424 2SD2150 2SB1308 2SB1386 2SD1963 2SD2Q98 2SB1427

2N929

Abstract: 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72 BFX65
Contextual Info: AF transistors Continued Nr. Maximum ratings ^tot at 'amb = + 4 5°c 7C W mA 1.06) 1000 1.06) 1000 1000 1.06) 1.06) 1000 1.06) 1000 1.06) 1000 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 200 0.15 0.15 200 0.15 200 200 0.15 0.15 200 200 0.15 200 0.15 200

2N5320

Abstract: 2N5321 2N5322 2N5323 2N5323, PNP TO-39
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 (PNP) TO-39 Metal Can Package Medium Power Amplifier and Switching Applications.

2N6178

Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

BC639

Abstract: BC637 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet
Contextual Info: BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1

rca1a10

Abstract: 2N3439 complementary BFT28B RCS88 2N5415
Contextual Info: Power Transistors High-Voltage n-p-n and p-n-p Type Selection Charts cont'd h v C E O (sus) V CEX V V (sat)-V 'CEX-mA F E CE (sus> »C V V CE Temp.-°C A 25 A V C E V 'c 'B A A ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ 5240 FAMILY (n-p-n) Multiple E

iskra

Abstract: BC107 to92 BD NPN transistors 177 BD139 BC107A BC393 BC107 BC177 BC237 BC308
Contextual Info: ISKRA ELECTRONICS INC SSE D • 4flfl3M77 0000113 7 ■ ■ 7"- 3 /- / 7 r^ 3 f-r? Silicijevi transistor^ malih moci Silicon low power transistors BC107 : VcBO UCEO UEBO : JV V) (V) 50 45 5 A B NPN B0177 A B PNP 50 - - BC237 A B NPN 45 BC238 A B C NPN ;‘-L.

ca3096

Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
Contextual Info: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

RCA1E02

Abstract: RCA1A15 RCA1A11 rca1a09 40327 205MD 2N406 RCA 40313 40318 RCA rca+40412
Contextual Info: Power Transistor High-Voltage n-p-n and p-n-p Type Selection Charts H V CEQ sus V CEX V V ( s a t ) - •V 'CEX-mA FE CE (sus) V V A 9 FAMILY (n-p-n) High Voltage, Com 5 M H z m i n ; P = 10Wma: CE Temp.—°C V 25 V CB »C •B V A A mm T mmmm 40346 2N3440«