3N21 Search Results

3N211

Abstract: mpf211 2N211 MOTOROLA 3N212 3N213 2N211 3n211-3n213
Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6367254 Tt MOTOROLA SC XSTRS/R DT|b3b7ES4 96D 82620 F D 3N211 3N212 3N213 M A X IM U M R A T IN G S Rating Sym bol 3N211 3N212 3N213 U nit Vds 27 35 Vdc Vdgi VDG2 35 35 40 40 Vdc Drain-Source Voltage Drain-Gate Voltage ODöEbSO .

Contextual Info: DIGITRON SEMICONDUCTORS 3N211-3N213 DUAL-GATE VHF AMPLIFIER N-CHANNEL - DEPLETION MAXIMUM RATINGS Rating Symbol 3N211 3N212 3N213 Unit Drain Source Voltage VDS 27 35 Vdc Drain Gate Voltage VDG1 VDG2 35 35 40 40 Vdc Drain Current ID 50 mAdc Gate Current IG1

Contextual Info: DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain – source voltage VDS 25 Vdc Drain gate voltage VDG1 VDG2 30 Vdc Gate current IG1R IG1F IG2R IG2F -10 10 -10 10 mAdc Drain current – continuous

3N211

Abstract: Depletion
Contextual Info: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

3n211

Abstract: 3N211S 3n21 MOS 4490 3n212 3n213 dual-gate
Contextual Info: TYPES 3N2H, 3N212, 3N213 N-CHANNEL DUAL-GATE DEPLETION-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 2 0 0 9 , M A R C H 1 9 7 3 DEPLETION-TYPE MOS SILICON TRANSISTORS Monolithic Gate-Protection Diodes Low Crss • • • 0.05 pF Max

3n214

Abstract: 3n215 3N217
Contextual Info: TYPES 3N 2U THRU 3N217 N-CHANNEL DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 9 1 . M A R C H 1 9 7 3 DIODE-PROTECTED DEPLETION-TYPE MOS SILICON TRANSISTORS For Low-Power Chopper or Switching Applications •

mpf211

Abstract: 3N213 3N211
Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6367254 Tt MOTOROLA SC XSTRS/R DT|b3b7ES4 96D 82620 F D 3N211 3N212 3N213 M A X IM U M R A T IN G S R a tin g Sym bol 3N211 3N212 3N213 U n it Vd s 27 35 Vdc Vd g i 35 35 40 40 Vdc D rain-Source V oltag e D rain-G ate V o lta g e

3SK121Y

Abstract: 3sk121gr BSV81 3N126 SD2150E 40468a mosfet 2N3796 3N125 mosfet 2N3797 MOTOROLA MPF213
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS M IDSS Max (A) PD Max (W) rDS (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max (V) Max (F) Max t8) tf Max TOper (8) (OC) Max Package Style N-Channel Dual-Gate Tetrode, (Cont'd) 5 10 3N211 3N212 3N212 MPF211 MPF212

3n211

Abstract: dual-gate
Contextual Info: 3N211 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 3N211 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection Diodes, Used in VHF Low Noise Amplifier Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS I 50 mA V 25 V PDISS

3n212

Contextual Info: 3N212 DUAL GATE MOSFET N-CHANNEL DEPLETION MODE DESCRIPTION: The ASI 3N212 is a Dual Gate Mosfet Designed for Low Noise Mixer Applications in VHF Receivers. FEATURES: • Integrated Gate Protection • High Conversion Gain PACKAGE STYLE TO-72 MAXIMUM RATINGS

transistors mos

Contextual Info: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2SC631

Abstract: 2SC632 2SC634 2n7471 A608 transistor pnp 2N7481 ZA-14 FV918 2N625 J3030
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2SA430

Abstract: 987T1 988T1 989T1 2SA316 OC304 2SA315 transistor 2N222 2SA314 2SA348
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

3N209

Abstract: dual-gate
Contextual Info: 3N209 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 3N209 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection Diodes, Used in UHF Low Noise Amplifier Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS I 30 mA VDS 25 V PDISS

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

VHF FM PLL schematic mc145152

Abstract: AN980 motorola MC3362 AN980 Motorola VHF Narrowband 8 channel RC transmitter and Receiver circuit DIA ITT 10.7 MHz crystal filter RMC2A6597 RS-204-C noaa weather radio circuit diagram radio av receiver schematic diagram fm receiver single chip
Contextual Info: WARNING: THIS DIGITAL REPRODUCTION DOES NOT MEET WITH MOTOROLA’S STANDARD FOR QUALITY While we regret the electronic source for the following document does not comply with Motorola’s standard for quality, it currently represents the best reproduction available. Improving the quality of substandard digital reproductions is a key goal. To improve the standard,

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

BF817

Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
Contextual Info: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N

transistor 2sA144

Abstract: 2SA234 2SA144 2SA235 TRANSISTOR r73 2N2672 2SA135 2N1516 2N2654 dm-58
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1423

Abstract: 2N5577 2N5579 MD38 1401-0207 MT1836 2SD223
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

B170007

Abstract: B170008 sk 110 19 20n B170002 b176 SDT8111 B170003 B170004 B170005 B170006
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

3N211

Abstract: 3N201 3N212 3N205 3N204 dual gate 3N203 3N213 3N202
Contextual Info: FIELD-EFFECT TRANSISTORS continued MOSFETs Dual Gate MOSFETs MOSFETs N-CHANNEL These devices are especially suited for RF amplifier and mixer applications in TV tuners, radio, etc. The Dual Gate construction also allows easy AGC control with very low power.

3N225

Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
Contextual Info: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018