DUAL GATE MOSFET IN UHF AMPLIFIER Search Results

BCR108S

Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Contextual Info: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes

Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain

marking K1 sot363

Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

BG3130

Abstract: BG3130R VPS05604 3D SOT363
Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain

Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

BCR108S

Abstract: BG3130 BG3130R 3D SOT363 marking K1 sot363
Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

Contextual Info: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain

BCR108S

Abstract: BG3130 BG3130R
Contextual Info: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain

BG3430R

Abstract: Marking G2 BCR108S
Contextual Info: BG3430R DUAL N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of 4 5 6 UHF and VHF tuners • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High gain, low noise figure, high AGC-range

G2 marking

Abstract: BG3140R
Contextual Info: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance

BG5120K

Abstract: BCR108S
Contextual Info: BG5120K Dual N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range

Contextual Info: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction

BCR108S

Abstract: BG5120K k914
Contextual Info: BG5120K Dual N-Channel MOSFET Tetrode • Low noise gain controlled input stages for UHF 4 5 6 and VHF -tuners e. g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • Low noise figure, high AGC-range • Improved cross modulation at gain reduction

Contextual Info: Philips Semiconductors Data sheet status Product specification date of issue April 1995 FEATURES • Short channel transistor with high ratio IVfsi^Cis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143R microminiature

br 8764

Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Contextual Info: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable

TRANSISTOR mosfet BF998

Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
Contextual Info: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

Transistor BF988

Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
Contextual Info: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

PHILIPS MOSFET MARKING

Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Contextual Info: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.

NTE455

Abstract: nte455 MOSFET G2DG1 nte455 data sheet dual-gate
Contextual Info: NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor MOSFET Description: The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners.

bf998 Mop

Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
Contextual Info: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

varicap diodes

Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Contextual Info: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld

K 2611 MOSFET

Abstract: mosFET K 2611 m4t made K 2611 MOSFET VOLTAGE RATING BF1215 N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER
Contextual Info: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.

Contextual Info: BF1215 Dual N-channel dual gate MOSFET Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.

Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor