3N212 Search Results

3N211

Abstract: mpf211 2N211 MOTOROLA 3N212 3N213 2N211 3n211-3n213
Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6367254 Tt MOTOROLA SC XSTRS/R DT|b3b7ES4 96D 82620 F D 3N211 3N212 3N213 M A X IM U M R A T IN G S Rating Sym bol 3N211 3N212 3N213 U nit Vds 27 35 Vdc Vdgi VDG2 35 35 40 40 Vdc Drain-Source Voltage Drain-Gate Voltage ODöEbSO .

Contextual Info: DIGITRON SEMICONDUCTORS 3N211-3N213 DUAL-GATE VHF AMPLIFIER N-CHANNEL - DEPLETION MAXIMUM RATINGS Rating Symbol 3N211 3N212 3N213 Unit Drain Source Voltage VDS 27 35 Vdc Drain Gate Voltage VDG1 VDG2 35 35 40 40 Vdc Drain Current ID 50 mAdc Gate Current IG1

3n211

Abstract: 3N211S 3n21 MOS 4490 3n212 3n213 dual-gate
Contextual Info: TYPES 3N2H, 3N212, 3N213 N-CHANNEL DUAL-GATE DEPLETION-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 2 0 0 9 , M A R C H 1 9 7 3 DEPLETION-TYPE MOS SILICON TRANSISTORS Monolithic Gate-Protection Diodes Low Crss • • • 0.05 pF Max

mpf211

Abstract: 3N213 3N211
Contextual Info: MOTOROLA SC ÎXSTRS/R F> 6367254 Tt MOTOROLA SC XSTRS/R DT|b3b7ES4 96D 82620 F D 3N211 3N212 3N213 M A X IM U M R A T IN G S R a tin g Sym bol 3N211 3N212 3N213 U n it Vd s 27 35 Vdc Vd g i 35 35 40 40 Vdc D rain-Source V oltag e D rain-G ate V o lta g e

3SK121Y

Abstract: 3sk121gr BSV81 3N126 SD2150E 40468a mosfet 2N3796 3N125 mosfet 2N3797 MOTOROLA MPF213
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS M IDSS Max (A) PD Max (W) rDS (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max (V) Max (F) Max t8) tf Max TOper (8) (OC) Max Package Style N-Channel Dual-Gate Tetrode, (Cont'd) 5 10 3N211 3N212 3N212 MPF211 MPF212

3n212

Contextual Info: 3N212 DUAL GATE MOSFET N-CHANNEL DEPLETION MODE DESCRIPTION: The ASI 3N212 is a Dual Gate Mosfet Designed for Low Noise Mixer Applications in VHF Receivers. FEATURES: • Integrated Gate Protection • High Conversion Gain PACKAGE STYLE TO-72 MAXIMUM RATINGS

transistors mos

Contextual Info: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

BF817

Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
Contextual Info: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N

3N211

Abstract: 3N201 3N212 3N205 3N204 dual gate 3N203 3N213 3N202
Contextual Info: FIELD-EFFECT TRANSISTORS continued MOSFETs Dual Gate MOSFETs MOSFETs N-CHANNEL These devices are especially suited for RF amplifier and mixer applications in TV tuners, radio, etc. The Dual Gate construction also allows easy AGC control with very low power.

3N225

Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
Contextual Info: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018

F245B

Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten

3N211

Contextual Info: MOTOROLA Î SC 34 -CDIODES/OPTOJ 6 3 6 7 2 5 5 MOTOROLA SC • . . »FJt.Bt.7E5S QG3ADM3 1 34C CDIODES/OPTO 38043 r- h TT -•*' ~ t S’ FIELD-EFFECT TRANSISTORS DICE continued) 3C211 DIE NO. LINE SOURCE — DFM881 This die provides performance equal to or better than that of

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

2N4351 MOTOROLA

Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
Contextual Info: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132

TRIAC RCA ca3058

Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Contextual Info: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY