3866 TRANSISTOR Search Results

t 3866 power transistor

Abstract: t 3866 t 3866 transistor 3866 transistor transistor t 3866 C 3866 3866 power transistor TRANSISTOR BFR97 c 3866 transistor Transistor BFR 97
Contextual Info: 2N 3866 M ULTI-EM ITTER SILICON PLANAR NPN 97 V H F -U H F O S C ILL A T O R POWER A M P L IF IE R The 2N 3866/B F R 97 is a silicon planar epitaxial NPN transistor in Jedec T O -3 9 metal case. It is designed fo r V H F -U H F class A , B, or C am plifier circuits and oscillator applications.

hd6473827w

Abstract: Hitachi DSA002780
Contextual Info: H8/3867 Series H8/3867 H8/3866 H8/3865 H8/3864 H8/3863 H8/3862 HD6473867, HD6433867 HD6433866 HD6433865 HD6433864 HD6433863 HD6433862 H8/3827 Series H8/3827 H8/3826 H8/3825 H8/3824 H8/3823 H8/3822 HD6473827, HD6433827 HD6433826 HD6433825 HD6433824 HD6433823

Contextual Info: H8/3867 Series H8/3867 H8/3866 H8/3865 H8/3864 H8/3863 H8/3862 HD6473867, HD6433867 HD6433866 HD6433865 HD6433864 HD6433863 HD6433862 H8/3827 Series H8/3827 H8/3826 H8/3825 H8/3824 H8/3823 H8/3822 HD6473827, HD6433827 HD6433826 HD6433825 HD6433824 HD6433823

3733

Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090

t 3866 power transistor

Abstract: t 3866 transistor t 3866 TRANSISTOR D 471 C 3866 3866A UHF power TRANSISTOR PNP TO-39 672-3866A 3866 D 400 transistor
Contextual Info: Fax-on-Demand: 86-22-24207687 / 25-471-1126 Tel-on-Demand: 86-22-24207688 / 25-471-1136 Before ordering check with factory for most current data 672-3866 / 672-3866A RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor

E1 1000J UD

Abstract: 1S164 ndk45 Hitachi DSA002720 hd6433827
Contextual Info: H8/3867 Series H8/3867 H8/3866 H8/3865 H8/3864 H8/3863 H8/3862 HD6473867, HD6433867 HD6433866 HD6433865 HD6433864 HD6433863 HD6433862 H8/3827 Series H8/3827 H8/3826 H8/3825 H8/3824 H8/3823 H8/3822 HD6473827, HD6433827 HD6433826 HD6433825 HD6433824 HD6433823

Hitachi DSA002711

Contextual Info: H8/3867 Series H8/3867, H8/3866 H8/3865, H8/3864 H8/3863, H8/3862 H8/3827 Series H8/3827, H8/3826 H8/3825, H8/3824 H8/3823, H8/3822 Hardware Manual ADE-602-142A Rev. 2.0 6/2/99 Hitachi Company or Division Notice When using this document, keep the following in mind:

transistor rc 3866

Abstract: transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983
Contextual Info: MPS1983 See MPS901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS3866 D ie S o u rc e S a m e as 2N 3866 The RF Line 1C = 400 m A M A X IM U M RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage

BFR 450

Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95

Contextual Info: S GS-TH O M SO N ?1C D î'ü S T E B ? ; ODGMfitiO - 0 | rT " 3 3 - 6 f THOMSON SEMICONDUCTORS wideband VHF - UHF class C for ECM and radio links applications V cc PACKAGE TYPE ^out Frequency m in range M H z CONFIG. (V ) • (W) 2N 3866 2N 5090 2N 5635

Transistor BFR 96

Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP

BFR 450

Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95

bss17

Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN

HD64338

Abstract: HD6473827 Hitachi DSA00198 HD647386
Contextual Info: H8/3867 Series H8/3867, H8/3866 H8/3865, H8/3864 H8/3863, H8/3862 H8/3827 Series H8/3827, H8/3826 H8/3825, H8/3824 H8/3823, H8/3822 Hardware Manual ADE-602-142A Rev. 2.0 09/98 Hitachi Company or Division Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s

2n4427

Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Contextual Info: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.

t 3866 power transistor

Abstract: transistor 3866 s t 3866 transistor transistor 3866
Contextual Info: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.

BFR90 transistor

Abstract: 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N3866 2N5032
Contextual Info: f Device Type ^ Pout O u tp u t Power Watts g PE Power Gain dB M in. V cc S upply Voltage V o lts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01

power amplifier IC 4440

Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min

uhf amplifier design BFR90

Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
Contextual Info: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01

122d

Abstract: blw79 BLW80 BLX91 sot 122
Contextual Info: 61 RF/Microwave Devices Bipolar RF Transmitting Transistors UHF 400-512MHz Package Outline Type No. Load Power W> @ 470MHz Power Gain (dB @ 470MHz Supply Voltage (V) 1.2 8 10.5 6 7.5 7.5 0.4 1 2 2 2 2 2.5 4 5 7 10 10 15 20 30 45 60 10 12 6 9 6 9 10 8 10.5

protectron

Contextual Info: These new multiport terminated switches are specialy designed to comply with the hard and specific requirements for automated test and measurement benches, or signal monitoring applications. The main feature is a guarantee of very good repeatability of RF

BFR99

Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200

transistor 3866 s

Abstract: 5812 MOTOROLA 3866 transistor c 3866 transistor MRF5583 8372 motorola transistor 3866 MOC205R1
Contextual Info: SO-8 Devices Maximum die size 40 mil x 60 mil C A SE 751-05 CASE 846-01 RF Transistors Maximum Ratings Galn-Bandwidth NF @ <s 2.1 1.5 0.8 1.6 2.25 5.5 5 -3 5 35 50 50 50 75 75 — — 3.4 200 — — — — — — 2 500 — Typ dB MHz 1.5 12 10.5 18 12 15.5

BFR99

Abstract: BFR38 BC377 BFR36 BFR99A bfr18 2N3137 2N5109 LH105 t 3866 transistor
Contextual Info: /IT SGS-THOMSON TELECOM AND DATA COMMUNICATIONS * 7# »»lajgraoraotss SMALL SIGNAL TRANSISTORS C haracteristics Max ratings Polar. V CEO V *C (m A) Type P .o, (m W ) *T (M H z) ar d NF (dB) NPN NPN NPN PNP NPN NPN NPN 15 15 15 25 20 30 20 25 50 50 50 200