32N60AS Search Results

ixgk32n60

Contextual Info: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms

32N60AS

Abstract: D-68623
Contextual Info: IXGH 32N60A IXGH 32N60AS VCES IC25 VCE sat tfi HiPerFASTTM IGBT = = = = 600 V 60 A 2.9 V 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; R GE = 1 MΩ 600 V VGES Continuous ±20 V

Contextual Info: IXGH 32N60A IXGH 32N60AS HiPerFAST IGBT = = = = CES v C25 CE sat tfi 600 V 60 A 2.9 V 125 ns *4 $ Maximum IRatings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CQR Tj = 25°C to 150°C; RGE = 1 M£2 600 V v GES Continuous ±20 V v GEM Transient

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1