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    IXYS Corporation IXYA30N120A4HV

    IGBTs TO263 1200V 30A XPT
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    Mouser Electronics IXYA30N120A4HV
    • 1 $10.42
    • 10 $5.78
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    TTI IXYA30N120A4HV Tube 300
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    IXYS Corporation IXYH30N120A4

    IGBTs TO263 1200V 30A XPT
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    Mouser Electronics IXYH30N120A4
    • 1 $10.65
    • 10 $6.31
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    TTI IXYH30N120A4 Tube 31,590 30
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    TME IXYH30N120A4 300
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    IXYS Corporation IXYP30N120A4

    IGBTs TO220 1KV 30A IGBT
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    TTI IXYP30N120A4 Tube 300
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    TME IXYP30N120A4 300
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    Littelfuse Inc IXYA30N120A4HV-TRL

    IGBTs IXYA30N120A4HV-TRL
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    RS IXYA30N120A4HV-TRL Bulk 8 Weeks 800
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    Littelfuse Inc IXYH30N120A4

    Disc Igbt Xpt-Genx4 To-247Ad/ Tube; |Littelfuse IXYH30N120A4
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    Newark IXYH30N120A4 Bulk 30
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    RS IXYH30N120A4 Bulk 8 Weeks 30
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    30N120A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    30N120A

    Contextual Info: Advanced Data High Voltage IGBT with Diode IXDH 30N120AU1 VCES IC25 VCE sat typ SCSOA Capability Symbol Test Conditions V CES Tj =25°C to 150°C Vco„ T, = Maximum Ratings 25°C to 150°C; RGE= 1 M fi 1200 V 1200 V V GES Continuous ±20 V V QE„ T ransient


    OCR Scan     		30n120au1o-24730n120a PDF

    IXDH30N120AU1

    Abstract: 30N120A
    Contextual Info: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 V CES 1200 V 50 A 2.5 V ^C25 V CE sat typ S hort C ircuit SOA Capability Prelim inary Data Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES


    OCR Scan     		30n120au1o-268ixdh30n120au130n120a PDF

    30N120AU1

    Abstract: robot control TO-268 IXDH30N120AU1
    Contextual Info: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.5 V Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		30n120au1o-268robot controlto-268+1ixdh30n120au1 PDF

    IXBH 40N160

    Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1
    Contextual Info: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □


    OCR Scan     		20n60b35n60b20n120a20n120+1230n12075n120at0-2209n1409n160ixbh 40n16020n120d1insulated gate bipolar transistors55n120d120n60bd1ixbh9n16035n60bd1 PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		axc-051axc-051-raxc-102axv-002+16015-14to12x45-16io12x60-08io12x60-12io12x60-14io12x60-16io1dse 130 -06avub 70-12ixgh 30n120vub 70-1630n60b80n1012n60cddsei 30-16 asdsep 15-06a13n50 PDF

    b14 smd diode

    Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
    Contextual Info: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60


    OCR Scan     		t0-220o-263o-247t0-204+1524n6030n6040n6025n10045n100b14 smd diodeb1108diode smd b14smd diode b110016n60b1106b1112b1108 db1116ixys 30n60 PDF