2SD80 Search Results

2SD809

Abstract: 2SB731 H150 B731
Contextual Info: 2SB731 /2 S D 8 0 9 1 2SB731 2SD809(1 ) P N P /N P N i t ’ 9 P N P /N P N Silicon Epitaxial T ransistor Audio Frequency Power A m plifier '> i) = ! > t = 7 ' ^ ' > 7 . 9 Low Speed S w itching ffijs » m ti mm ts * y y y ’ Vy'i y\ o i- j'F f'f- /, ') u -

2SD804

Abstract: 2SB747 2SD803 2SD812
Contextual Info: P A N A S O N I C IN] L/ELEK{SEni> 72C D | t,^32flS4 □ 0 0 c13c17 fl | ~ D f . 3 y. * 2SD803 = 5 y V 7 ,5 > h 2SD803 v - 1) If M / S i N P N Diffused Junction M esa NPN Power Amplifier • $$ ^¡[/F eatures • i£WcWi&S-*}-ffiSkcotzfr&£M1¥ffiM ASO) W id e a r e a o f sa fe o p e ra tio n re a liz e d by d iffu sed ju n c tio n m e s a s tru c tu re .

Contextual Info: 2SD802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)900 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SD803 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

Contextual Info: 2SD806 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC) h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)50

2SB731

Abstract: 2SD809
Contextual Info: SavantIC Semiconductor Product Specification 2SB731 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD809 ·Low collector saturation voltage · APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING

Contextual Info: 2SD809 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD801

Abstract: 25D8 EBG HVT 8 2SD802
Contextual Info: 2SD801,2SD802 SILICON NPN TRIPLE DIFFUSED -> >ja>N P N E .sm m m HIGH SPEED AND HIGH CURRENT SWITCHING & k x m ì m z i, 7 f > s i — X Base = v 9 Em itter 3 u ? : C ollector y — X, (Case) ( D im e n s io n s in mm) (JEDEC TO-3) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

Contextual Info: 2SD80 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)200u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD883A

Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150

2SD809

Abstract: 2SB731
Contextual Info: Inchange Semiconductor Product Specification 2SB731 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SD809 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed switching PINNING

Contextual Info: 2SD807 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800è V(BR)CBO (V)1.2k I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD805

Abstract: 2SD80
Contextual Info: 2SD805 保守品） FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON ＮＰＮ三重拡散プレーナ形 ハイパワーダーリントン 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features 特長： hFE が高い

2SD806

Abstract: 2SD80 TB30
Contextual Info: 2SD806 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH CURRENT ＮＰＮ三重拡散プレーナ形 高耐圧大電流、高速スイッチング用 HIGH SPEED SWITCHING 外形寸法 : Outline Drawings 外形寸法: 特長 ：Features

LE 50

Abstract: 2SD806 A146
Contextual Info: 2SD806 fö3!"n TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON /M V < 7 raffiÎŒ, ^lUSiE, H IG H VOLTAGE, H IG H C U R R E N T, S W IT C H IN G • # - fi : Features • hFE*''Sv,' High D. C. current gain • Low saturation voltage • A S O ^ / A t' • A f if U Ê

Contextual Info: 2SD801 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)375 V(BR)CBO (V)800 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2770

Abstract: 2SC2930 ETN36-030 2SC2443 2SD806 ET125 ET127 ETM36-030 ETN01-055 ETN31-055
Contextual Info: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.

2SC2930

Abstract: 2SC2770 ET127 ETN01-055 2SC2443 2SD806 ET125 ETM36-030 ETN31-055 ETN36-030
Contextual Info: . COLLMER SEMICONDUCTOR INC 2SE D • I S5BÔ7TB OÜD1GTE 5 Hi 7^35-/*5* Ratings and Specifications ■r-,33 -¿f ¡1 0 Large current speed switching transistors • These Ic can handle large current up to 3 0 or 5 0 Amps yet the switching speed is very high.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sb405

Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100

2SD737

Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable