2SC5107 Search Results

Pc 614

Abstract: 2SC5107
Contextual Info: TOSHIBA 2SC5107 2 S C 5 1 07 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: Reliability Tests Report Product Name: 2SC5107 Package Name: USM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

Contextual Info: 2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5107

Contextual Info: 2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

SC 5388

Contextual Info: T O SH IB A 2SC5107 2 S C 5 1 07 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ± 0.1 1.25 ±0.1 | M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

2SC5107

Contextual Info: TOSHIBA 2SC5107 2 S C 5 1 07 T O S H IB A TRA N SIST O R FOR VCO A PPLIC A TIO N SILICON NPN EPIT A X IA L PLA N A R TYPE M A X IM U M RATING S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: TOSHIBA 2SC5107 2 S C 5 1 07 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: 2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5107

Contextual Info: TO SH IBA 2SC5107 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 07 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation

Contextual Info: T O SH IB A 2SC5107 2 S C 5 1 07 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2.1 ± 0.1 M A X I M U M RATINGS Ta = ?S°Cl CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current

2SC5107

Contextual Info: 2SC5107 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5107 単位: mm ○ VHF~UHF 発振用 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ･ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ･ エ ミ ッ タ 間 電 圧

Contextual Info: 2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

entire

Abstract: of ic 565 2SC5107
Contextual Info: 2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO

Contextual Info: TOSHIBA 2SC5107 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 07 U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。