2SC3980 Search Results

Contextual Info: Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Satisfactory linearity of foward current transfer ratio hFE

2SC3980

Abstract: 2SC3980A
Contextual Info: Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ● ● ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC3980 base voltage 2SC3980A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 φ 3.2±0.1 • Absolute Maximum Ratings TC = 25°C

Contextual Info: Power T ransistors 2SC3980, 2SC3980A 2SC3980, 2SC3980A Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U n it : mm • Features • High collector-base voltage 5.2m ax. 15.5m ax. 6.9m in. • High sp eed switching

2SC3980

Abstract: 2SC3980A
Contextual Info: Power T ransistors 2SC3980, 2SC3980A 2SC3980, 2SC3980A Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Breakdown Voltage, High Speed Switching , U n it ! mm ■ Features • H igh s p e e d sw itch in g • H igh c o lle c to r-b a s e v o ltag e

D4242

Abstract: 2SC3987 2SC4000 2SC4001 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A
Contextual Info: - 182 - m XËtë m 2SC3975 2SC3976 2SC3977 2SC3977A 2SC3978 2SC3978A 2SC3979 2SC3979A 2SC3980 2SC3980A 2SC3981 2SC3981A 2SC3982 2SC3982A & tt KT KT KT KT KT KT KT KT KT KT KT KT KT KT « a mw Ta=25‘ C, *0][ÍTc=25eC V’ CBO V’ ceo IC(DC) Pc Pc* (V)

2SC3980

Abstract: 2SC3980A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ● ● ■ Absolute Maximum Ratings

Contextual Info: 2SC3980 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)4 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2

2SC3980

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 φ 3.2±0.1 (3.5) Solder Dip 21.0±0.5 16.2±0.5

2SC3980

Contextual Info: Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 21.0±0.5 16.2±0.5 • High-speed switching

2SC3980

Abstract: 2SC3980A
Contextual Info: Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ● ● ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC3980 base voltage 2SC3980A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3980 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

2SC3498

Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
Contextual Info: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3824

Abstract: 2SC4359
Contextual Info: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5282

Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) A p p li­ cation VcBO VcEO (V) (V) lr (A) (V) lc (A) High­ speed switch­ ing P ack ag e (No.) VcE(sat) Ib (mA) l/JS) MT3 (D40) MT4 (D41) r 0 -220(a) T0220F(a) TO-220E TO-220D N Type

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC3763

Abstract: 2SD1267A 2SC3536 RT1N140C 2SC3691 2SC3855 3845 3844 3841 3843
Contextual Info: - 174 - a s tt Type No. « Manuf. m = SANYO JIC ^ TOSHIBA B ^ NEC B HITACHI í ± 3 FUJITSU tfi T MATSUSHITA 2SC 3828 K 2SC 3829 ífi T 2SC 3830 -y-VÍTV -y-V'TV 2SC3087 2SC2335 2SC3090 2SC3536 2SC 3832 ✓ 2SC3039 2SC2335 2SC2898 2SC3870 2SC 3833 -y-yry

2SC4420

Abstract: 2sc5158
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Package (No.) VcE(sat) Appli­ cation H igh­ sp eed sw itch­ ing VcBO VceO lc (V) (V) (A) ti (V) lc !b (A) (mA) ißs) TO-220F(a) (D55) TO-220E (D59) 450

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

TT 2076

Abstract: 2SD1491 2SD1929 2SC3907 toshiba 2SD1407 2056 2SD2058 2SD1266 2SD2251 nec 258
Contextual Info: - 258 - m € Type No. 2SD 2056 2SD 2057 2SD 2058 * 2SD 2059 * 2SD 2060 2SD 2061 ^ 2SD 2062 2SD 2063 2SD 2064 2SD 2066 , 2SD 2067 2SD 2068 2SD 2069 2SD 2070 2SD 2071 2SD 2072 2SD 2073 2SD 2074 2SD 2075 2SD 2076 * 2SÖ 2077 2SD 2078 2SD 2079 2SD 2080 2SD 2081