2SC381 Search Results

2SC3604

Abstract: pt 240 2SC3810
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters • The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

2SC3819

Abstract: 2SC3852A 2SC3818 PA2012 2SA1488 251C 2SC3815 2SC3817 2SC3820 2SC3821
Contextual Info: - 174 - Ta=25^C, *EPÍáTc=25eC m 2SC3815 % ít S B m m & 900MHz PA Vc b o Vc e o (V) (V) m Ic(DC) Pc Pc* (A) (W) (W) 20 12 1.5 I c bo (max) (/¿A) 17.5 V’cB % (min) M tÉ (max) (V) 250 15 (Ta=25cO ) [*En(itypfiI] hF E 20 200 VCE (V) Ic/lE (A) (V) 7 0.2

2SC3811

Contextual Info: Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit: mm 5.0±0.2 4.0±0.2 High-speed switching. Low collector to emitter saturation voltage VCE sat . 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C) Parameter

2SC3811

Contextual Info: Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit: mm 5.0±0.2 High-speed switching. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

2SC3817

Abstract: j171 transistor j152
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3817 NPN SILICON EPITAXIAL TRANSISTOR FOR 1500-MHz BAND POWER AMPLIFIER INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in millimeters • High efficiency, high power output and excellent linearity obtainable at 1500-M Hz band

Contextual Info: Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE sat 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3810 is an NPN silicon epitaxial dual transistor having 5.0 MIN.

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters FEATURES • The 2SC3810 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product perform ance in a w ide operating

2SC3811

Abstract: TO-92-B1 2SC381
Contextual Info: Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage Emitter open Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Collector current

2SC3811

Contextual Info: Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE sat 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol

NEC J143

Abstract: 2SC3817
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3817 NPN SILICON EPITAXIAL TRANSISTOR FOR 1500-MHz BAND POWER AMPLIFIER INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in millimeters * High efficiency, high pow er output and excellent linearity 2 ± 0 .2 obtainable at 1500-M Hz band

2SC3811

Contextual Info: Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit: mm 5.0±0.2 High-speed switching. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

4288A

Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Contextual Info: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2SC3604

Abstract: 2SC3810
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920