2SC3314 Search Results

2SA1323

Contextual Info: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping

2SC3314

Abstract: 2SA1323 transistor NF
Contextual Info: Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage

2SA1323

Abstract: 2SC3314
Contextual Info: Transistors 2SC3314 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Optimum for high-density mounting • Allowing supply with the radial taping

Contextual Info: Transistors 2SC3314 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) M Di ain sc te on na tin nc ue e/ d 0.75 max. • Optimum for high-density mounting

2SA1323

Abstract: 2SC3314
Contextual Info: Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings marking Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage

2SA1323

Abstract: 2SC3314
Contextual Info: Transistors 2SC3314 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Optimum for high-density mounting • Allowing supply with the radial taping • Optimum for RF amplification of FM/AM radios

Contextual Info: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n

2SA1323

Abstract: 2SC3314
Contextual Info: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Allowing supply with the radial taping • High transition frequency fT

2SA1323

Abstract: 2SC3314 transistor nf
Contextual Info: Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 ● ● • Absolute Maximum Ratings 0.8 0.75 max. Optimum for high-density mounting. Allowing supply with the radial taping.

VCE-12V

Abstract: 2SC2351 2SC3314
Contextual Info: 86 - - bk — *ä S 5 • 2 SA 1 3 2 3 m fö T FT»: AM/FM Amp M 2SC3314 i>•>3 y Ü S S f T Ä v a i 'o i/ T / V r - b ' y ? ' t 0 i ! 5 ] # f i : l- 7 y 5 ^ S /El iil ® b Vc e o (V -20 Ve b o (V) -5 I c(mA) -30 i * « /]' W m m i CEO (M ) llFE f T(MHz)

2SA1323

Abstract: 2SC3314
Contextual Info: Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA1323

Abstract: 2SC3314
Contextual Info: Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA1323

Abstract: 2SC3314
Contextual Info: Transistor 2SA1323 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3314 Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SA1323

Abstract: 2SC3314
Contextual Info: Transistors 2SA1323 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3314 Unit: mm 4.0±0.2 • Features 15.6±0.5 • Allowing supply with the radial taping • High transition frequency fT • Optimum for high-density mounting

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

an6512n

Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Contextual Info: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

NEC 2933

Abstract: 2SD2004 2SC2559 2SC1740S 2SC2751 2SC2621 2SC2819 2SC2926S 2sc3153 2sc3277
Contextual Info: 150 - tt m % Type No. ^ 2SC 2929 ^ 2SC 2931 2SC 2932 2SC 2933 ¿ 2SC 2934 r 2SC 2935 2SC 2937 o' 2SC 2938 ✓ 2SC 2939 / 2SC 2943 2SC3000 2SC2621 M S TOSHIBA 2SC3038 XL 2SC2621 2SC2688 0 tL StS tc StS Æ SÍS7C 2SC2621 2SC2688 2SC 2959 2SC 2960 H * 2SC 2961 >

2sc3288

Abstract: 2SC3284 2SC3311 2SC3289 2-4F1C 2SA1306 2SC3298 2SA1309 2SC3303 2-21F1A 2SC3287
Contextual Info: - 152 - mXËfâ M 2SC3279 2SC3280 2SC3281 2SC3282A 2SC3283A 2SC3284 2SC3285 2SC3286-M 2SC3287 2SC3288 2SC3289 2SC3292 2SC3293 2SC3294 2SC3296 2SC3298 2SC3298A 2SC3298B 2SC3299 2SC3302 2SC3303 2SC3306 2SC3307 2SC3309 2SC3310 2SC3311 2SC3311A 2SC3312 2SC3313