2SC2535
Abstract: 400V to 6V DC Regulator
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2535 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED HIGH VOLTAGE SW IT C H IN G APPLICATIONS. SW ITCHIN G REGULATOR APPLICATIONS. JO 3 MAX HIGH SPEED D C-DC CONVERTER APPLICATIONS. • Excellent Switching Time • High Collector Breakdown Voltage V C E O = 400V
|
OCR Scan
|
2sc2535400v to 6v dc regulator |
PDF
|
but46a
Abstract: PEC730
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 -30 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11 SPT3439 BUT11F BUT11F 2SC2518L MJ425 MJ425 MJ425 BUT46 BU120 ~~6~~1SK 35 40 2S09S7 PMS5K425 SOT1015 BUS11A BUT11A BUW11AF BUX46A
|
Original
|
ot430ot4312n5241ots431+4sta9364sts430but46apec730
|
PDF
|
2SC2535
Abstract: npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High collector breakdown voltage : VCEO=400V Min ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max. APPLICATIONS ·High speed high voltage switching applications
|
Original
|
2sc2535o-220cnpn transistors 400v 3a |
PDF
|
2SC2535
Abstract: npn transistors 400V 3A TR10S DC DC converter 5v to 200V ic
Contextual Info: Inchange Semiconductor Product Specification 2SC2535 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V Min ・Excellent switching time : tr=1.0 s(Max.) : tf=1.0μs(Max. APPLICATIONS ・High speed high voltage switching applications
|
Original
|
2sc2535o-220cnpn transistors 400v 3atr10s+1dc dc converter 5v to 200v ic
|
PDF
|
2SC2509
Abstract: 2SC2541 2SC2534 2SC2499 2SC2539 2sc2547 2SC2495 2SC2510 2SC2530 2sc2555
Contextual Info: - 126 - Ta=25QC, *EpííTc=25°C m 2SC2495-KA 2SC2495—MA 2SC2496A 2SC2497 2SC2497A 2SC2498 2SC2499 2SC2500 2SC2509 2SC2510 2SC2512 2SC2516 2SC2516A 2SC2517 2SC2518 2SC2522 2SC2523 2SC2527 2SC2528 2SC2530 2SC2532 2SC2534 2SC2535 2SC2538 2SC2539 2SC2540
|
OCR Scan
|
2sc2495-ka2sc2495-ma2sc2496a2sc2497+152sc2497a2sc24982sc24992sc2500o-220ab2sc25352sc25092sc25412sc25342sc25392sc25472sc24952sc25102sc25302sc2555
|
PDF
|
2SA1012
Abstract: 2SA1293 2SC2562 2SC3258
Contextual Info: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6
|
OCR Scan
|
08s8720min2sa10122sa1293+22sc25622sc3258
|
PDF
|
nec 2501
Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA
|
OCR Scan
|
2sc24732sc24742sc24752sc2476+162sc24772sc24802sc24512sc24822sd24832sc2484nec 2501nec 2502nec 2505nec 2504nec 25062482 h2sc1555nec 25082sc36602sc2534
|
PDF
|
2sC2335
Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI
|
OCR Scan
|
2sc30402sc25552sc33652sc3277+132sc26502sc27402sc27922sc31512sc31532sc37832sc23352sc10092sc2534toshiba 28032sc28052sc1817a2sc2895
|
PDF
|
BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
|
Original
|
2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171buv48ibu808dxibd699buv18abd241cfitransistor 2sa1046buw52ibu808dfi equivalentbu724as2sa1046
|
PDF
|
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
|
Original
|
hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent
|
PDF
|
2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
|
Original
|
2n56552n56562n5657tip73b+14tip74tip74atip74btip75tip75atip75b2n5657 equivalent2sa1046bu326bu108bu1002sc2331 ytip47 4192n3792 application notes
|
PDF
|
MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
|
Original
|
bd157bd158bd159tip73b+16tip74tip74atip74btip75tip75atip75bmje4942sc1419bd 8042sd675mje104bd581bd135 curvesmj1000dts-40412n5037
|
PDF
|
2SD669 equivalent
Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc
|
Original
|
2n66092n37732n66672n6668+13220ab2n63872n63882sd669 equivalentbd801bdy29 equivalentbu1082sc20802sd4362n6021bd345tip122 d-pak package2sd544
|
PDF
|
2SC495
Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink
|
Original
|
mjf61072n6107e69369tip73b+16tip74tip74atip74btip75tip75atip75b2sc495nsp41abu108transistor bd614 motorola2sa663bd4122bd661mj1000nsp2100d45vh4 similar
|
PDF
|
|
|
D42C5
Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is
|
Original
|
mje16204tip73btip74tip74a+15tip74btip75tip75atip75btip75cd42c5transistor bc 6472n5302 ebpin out transistor tip2955bs170 replacement2sc141bu108bc 658motorola transistors mje3055 to 127mc7812 to-220
|
PDF
|
mje521 equivalent
Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
|
Original
|
mje521mje371tip73btip74+16tip74atip74btip75tip75atip75btip75cmje521 equivalentbu1082n3055 plastic2n6488 motorolamotorola transistors mje3055 to 1273904 transistorbdx54tip122 tip127 audio ampbu326bu100
|
PDF
|
2N3055
Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes
|
Original
|
mje2955tmje3055ttip73btip74+16tip74atip74btip75tip75atip75btip75c2n3055bu108an415amje2955t stbdx542n3055 audio amplifier application notebu326bu100mje13005bdv64
|
PDF
|
2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
|
Original
|
2n56302n60302n56312n6031+102n5631 equivalent2n5630 "cross-referencechomericsbu1082sa1046tip122 tip127 audio ampbu326bu1002sd313 equivalentnpn/tip42c as regulator
|
PDF
|
BD179-10 equivalent
Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
|
Original
|
bd179bd180bd179-10tip73b+14tip74tip74atip74btip75tip75abd179-10 equivalentbu1082sa10462sc7bdx54bux98abu326bu100bul1
|
PDF
|
sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
|
Original
|
mjl3281amjl1302atip73btip74+14tip74atip74btip75tip75asec tip41cmje4932sc14192sc32812n3055 audio output circuitbdw93mj1000bdw83buv98a cross reference2sc1943
|
PDF
|
TRANSISTOR BC 384
Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required
|
Original
|
tip47e69369mjf47tip73b+14tip74tip74atip74btip75tip75atip75btransistor bc 384bu108bd139 equivalent transistor2n3055 equivalentrca1c03transistor bc 574bu326bu100
|
PDF
|
Transistor 2sC1060
Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
|
Original
|
bdw46bdw42/bdw47220abbdw42+15bdw47tip73btip74tip74atip74btransistor 2sc10602sd4602sc143all similar transistor 2sa715bu108mj4102sd404bd241cbut56bdw59
|
PDF
|
MJ11017 equivalent
Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types
|
Original
|
mj11018mj11022mj11017mj11021+9tip73btip74tip74atip74bmj11017 equivalentbu108bu326bu100mje3055t
|
PDF
|
BU108
Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A
|
Original
|
buv21tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bu108transistor bc 5742n6107 motorola2sc1943mj3055 to2202sc1419bu326bu100mj*150332n6277
|
PDF
|
