2SC127 Search Results

2SC1275

Abstract: 2sc1927
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
Contextual Info: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI

2SC1681

Abstract: 2sc1971 2SC2990 2SC1165 2SC1843 2SC1763 2SC1764 2SC2363 2SD1486 2SC1740LN
Contextual Info: - 118m % T y p e No. * 2SC 1571 * 2SC 1571L tt « Manuf. = ì¥ SANYO 2SC1570 = n 2SC1570 2SC 1573 & T 2SC4218 2SC 1573A & T 2SC4218 * 2SC 1572 * 2SC 15 74 * 2SC 1577 * 2SC 1578 M 2 TOSHIBA 2SC 1681 m b NEC 2SC 1843 B 3L HITACHI 2SC 1775 m ± ii FUJITSU □

2SC783

Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
Contextual Info: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421

2SC1012

Abstract: 2sc1279 2SA675 2SC1012A 2SA685 2SC1103 2SC505 2SA637 2SA639 2SA749
Contextual Info: M A X IM U M R A T IN G S V CEO 'c m * Im A I V CER * V 300 200 250 300 250 50 50 100 50 50 150* 180 80» 150» 100 30 30 50 30 50 Pd (mW) 'c min max (m A) m 'c Cob V C E(SA T) h fe fT min Cre • (mA) (MHz) (pF) max ’c (V) max I NO. CASE < o< TYPE P O L A R IT Y

2SC124

Abstract: MT1711 AT330 BF197-01 2sC103 transistor SJ2520 2SC122 2sc103 SE5010 2SC104
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2SC1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that

2SA798

Abstract: 2SA733 2SA785 2SA778AK 2sc1567 2SA800 2SC1398 2SA720A 2SA798 g 2SA743
Contextual Info: 14 - m % T a = 2 5 cC , * E P Í Í T c = 2 5 ‘ ü m 2SA719 & tt fóT 2SA720 2SA720A fâT 2SA732 m M £ & VcBO VcEO (V) (V) Ici D C) Pc Pc* (W) (W) \M ld A / (A) 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 85 340 -10 -0.15 -0.6 -1. 5 -0.3 -0.03 -10 40 200 -10

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2sc1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that

2SC1733

Abstract: 2SC1275 2SC127
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE PACKAGE DIMENSIONS D E S C R IP T IO N in millimeters The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that

2SC1260

Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
Contextual Info: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6

transistor 1247a

Abstract: 1207B 2SC911 NFA 222 2SC1271A 2SC911A 1711A FJ 403E 2SA872A 2SC1207A
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC2804

Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Contextual Info: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787

2SC1202

Abstract: 2sc1203 2sc1201 2sc1225 2SC1294 2SC1237 2SC1239 2sc1234 2SC1247A 2sc1204
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SC1201 2SC1202 2SC1203 2SC1204 2SC1205 30 30 100 100 2SC1206 45 4.5 1.7A 2SC1206A 45 4.5 1.7A 2SC1206B 45 4.5 2A 2SC1207 45 4.5 3A 2SC1207B 45 4 4A 2SC1208 36 5 10A 2SC1208A

2SC1048

Contextual Info: High Voltage Transistors TYPE NO. CASE POLA­ RITY MAXIMUM RATINGS VCEO Pi Ic Vcer« ICM* mW (mA) (V) Hfi Vce(«*) C* fT c „ . min max . Ic (mA) VCE (V) mas (V) Ic (mA) min (MHz) mas (MHz) 30 10 10 50 25 10 10 10 20 10 1 0.5 0.5 10 1 30 10 10 50 25 110+