2SB995 Search Results

2SB995

Contextual Info: SavantIC Semiconductor Product Specification 2SB995 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High current capacity ·Low collector saturation voltage APPLICATIONS ·For audio frequency amplifier output stage applications PINNING PIN

2SB995

Abstract: 2SD1355
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB995 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@ IC= -4A ·Complement to Type 2SD1355

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

U7923

Abstract: 2SB995 2SD1355 2SD1355-Y
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CD Th DÈTJ S O T T E S O 0007=325 1 IS C R E T E / O P T O SILICON NFN TRIPLE DIFFUSED TYPE ~ . L: POWER AMPLIFIER APPLICATIONS. Unit in tnm 10/3 max. FEATURES: ’ 03.2±ag ' . High Breakdown Voltage : V cjjo =100V

2SB995

Abstract: tosh1ba 30WHigh
Contextual Info: T O S H I B A -CDISCRETE/OPTO} 9097250 TOSHIBA ^ T G T 7 E S D 0007=125 C D ISCRETE/OPTO SILICON NPN TRIPLE DÌFFUSED TYPE . V- POWER AMPLIFIER APPLICATIONS. Unit in mm 1 0 .3 MAX FEATURES: 0a.z±az s?-. . High Breakdown Voltage : V qjjo=100V n . Low Collector Saturation Voltage : VcE sat):=2 .0V(Max.)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SB5950

Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

Contextual Info: jjF lT C m B S O ~5Í TOSHIBA { D IS CR ETE/ OP TO* QDD73Ö4 O / 9 0 9 7 2 50 T O S H I B A D I S C R E T E /OPTO 56C 07384 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High Breakdown Voltage : Vq e o =~100V . Low Collector-Emitter Saturation Voltage

2SB995

Abstract: 2SD1355 a03 audio amplifier
Contextual Info: jqY h IBA Tb {DISCRETE/OPTO! DE 1 =10^7550 □ □ □ 7 3 öM 0 / 9 0 9 7 2 50 T O S H I B A <D I S C R E T E / O P T O 5ò C 07 3 8 4 t>T"3B^9 S I LICON PNP T R IP L E D IF F U S E D T Y P E POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High Breakdown Voltage ; V c e O=~100V