2SB928A Search Results

2SB928A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB928A TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High collector to emitter VCEO Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

2SB0928

Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SB0928, 2SB0928A 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO V –180 Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C

2SD1250

Abstract: 2SD1250A 2SB0928 2SB0928A 2SB928 2SB928A IC1102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

2SB0928

Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SB0928 2SB928 , 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C

Contextual Info: Product specification 2SB928A TO-252 Features 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 High collector to emitter VCEO Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SB928

Abstract: 2SD1250 IC vertical panasonic 2SB928A 2SD1250A A628A
Contextual Info: 2SD1250, 2SD1250A Power Transistors 2SD1250, 2SD1250A Silicon NPN Triple-Diffused Planar Type • Package Dim ensions Power A m plifier TV V ertical D eflection O utput C om plem entary Pair with 2SB928, 2SB928A ■ Features • H ig h D C c u r r e n t g a in h t t a n d g o o d lin e a rity

Contextual Info: Power T ransistors 2SB928, 2SB928A 2SB928, 2SB928A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SD1250, 2SD1250A •Features U nit i • High çollector-emitter voltage V ceo)

2SB928

Abstract: 18-SO 2SB928A 2SD1250 2SD1250A J1213
Contextual Info: Power T ransistors 2SB928, 2SB928A 2SB928, 2SB928A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SD 1250, 2SD1250A Unit • i 8.7max. 6.5max. • Features • High çollector-emitter voltage V c e o

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

Contextual Info: 2SD1250, 2SD1250A Power Transistors 2SD1250, 2SD1250A Silicon NPN Triple-Diffused Planar Type • Package Dim ensions Power A m plifier TV Vertical D eflection O utput Com plem entary Pair with 2SB928, 2SB928A ■ Features • High DC c u r re n t gain ht t an d good lin earity

2SB928

Abstract: 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO –180 V Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C dissipation

2SB928

Abstract: 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A ● 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 High forward current transfer ratio hFE which has satisfactory linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SB0928

Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type ● ● ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE sat N type package enabling direct soldering of the radiating fin to

2SB927

Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

2SD1204

Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202

2SD1250A

Abstract: IC vertical panasonic 2SD1245 2SD1249 2SD1249A 2SD1250 T0220AB
Contextual Info: PANASONIC INDL/ELEK-CSEUI} 72C D | tl ' i a a A S M DDDISSD 7 1 2SD1245 2SD1245 U > h " y / S \ N P N Triple Diffused Planar Darlington v U =i > N P N H i Unit \ mm J= $1:;f)ig'llS ffl/''A F Pow er Amplifier • it • 10.5 ± 0.5 9.8max. etq 7.6min. Oh

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691