2SB1172A Search Results

2SB1172

Abstract: 2SB1172A 2SD1742 2SD1742A
Contextual Info: Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification Complementary to 2SB1172 and 2SB1172A 7.0±0.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE sat

ic 4604

Abstract: lvco 251C 2SB1172 2SB1172A 2SD1742 2sb1742 t150t
Contextual Info: 2SB1172, 2SB1172A Power Transistors 2 S B 1 1 7 2 , 2SB 117 2A Silicon PNP Epitaxial Planar Type A F Pow er Amplifier C om plem entary Pair with 2 S D 1 7 4 2 , 2 S B 1 7 4 2 Package Dimensions Unit • mm • Features 3-7 max, 7.3max. 3.2max. • High DC current gain hpE and good linearity

panasonic 2SB

Abstract: panasonic 2SD DSA2IH00136084 2SB1742
Contextual Info: 2SB1172, 2SB1172A Power T ransistors 2SB1172, 2SB1172A Silicon PNP Epitaxial Planar Type Package Dimensions AF Pow er Amplifier C om plem entary Pair with 2SD 1742, 2SB1742 Unit I mm • Features • High DC current gain H f e and good linearity • Low collector-eimitter saturation voltage (Vcem )

2SB1172A

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1172A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Low collector-emitter saturation voltage VCE sat .

2sd742

Abstract: IC104 2SB1172 2SB1172A 2SD1742
Contextual Info: Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm 2SB1172 1.0 −60 VCBO Unit V 0.75±0.1 0.4±0.1 −60 4.6±0.4 Collector-emitter voltage 2SB1172 (Base open)

Contextual Info: Power Transistors 2SD1742, 2SD1742A 1 ^ 3 2 0 3 2 GGlbflBl ITT 2SD1742, 2SD1742A Silicon PNP Triple-Diffused Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SB1172, 2SB1172A • Features Ufiit ‘ mm • H igh D C c u r re n t gain Iife and good lin e a rity

Contextual Info: Transistors SMD Type Product specification 2SB1172A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Low collector-emitter saturation voltage VCE sat .

2SB1172

Abstract: 2SB1172A 2SD1742 2SD1742A DSA003718 IC-303
Contextual Info: Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm For low-freauency power amplification Complementary to 2SB1172 and 2SB1172A 7.0±0.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE sat

2SD742

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm Collector-base voltage 2SB1172 (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm Collector-base voltage 2SB1172 (Emitter open)

2SB1172

Abstract: 2SB1172A 2SD1742
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A Unit: mm M Di ain sc te on na tin nc ue e/ d Collector-base voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage (Emitter open) 2SD1742 Rating Unit

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

SB-116

Abstract: 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161
Contextual Info: - 78 - Ta=25eC, *Ep{ÎTc=25'C m g ffl & m Vcbo VcEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) ICBO ViuaA/ ilik) »^B (¥) m \m i n / w te & hF E y (Ta=25eO) u / î,- VIIIOA/ (V) [*EP(itypffl] /n o v i W W le (A) W I b (A) 2SB1Í5? tö T PA -100 -100 -5 3 60 -50

2SB1172

Abstract: 2SB1172A 2SD1742 2SD1742A
Contextual Info: Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage Emitter open 2SD1742 Rating Unit VCBO 60 V 2SD1742A VCEO Emitter-base voltage (Collector open)

2sb1742

Contextual Info: Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage Emitter open 2SD1742 Rating Unit VCBO 60 V 2SD1742A VCEO Emitter-base voltage (Collector open)

2SB1168

Abstract: 2sb1163 2SD1731 2SD1713 2SD1714 2SD1715 2SD1716 2SD1718 2SD1719 2SD1720
Contextual Info: - 262 - Ta=25XïP*Ef]fÎTc=25eC m 2SD1713 2SD1714 2SD1715 2SD1716 2SD1717 2SD1718 2SD1719 2SD1720 2SD1722 2SD1723 2SD1724 2SD1725 2SD1726 2SD1727 2SDÌ728 2SD1729 2SD1730 2SD1731 2SD1732 2SD1733 2SD1733F5 2SD1734 2SDÎ735 2SD1736 2SD1737 2SD1738 2SD1739

2SB1172

Abstract: 2SB1172A 2SD1742 2SD1742A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2SD1742 Collector-base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type Unit: mm 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ Collector-base voltage (Emitter open) 2SD1742 Rating Unit

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691