2SB1135 Search Results

2SB1135

Abstract: 2SD1668
Contextual Info: SavantIC Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1668 ·Low collector saturation voltage ·Wide ASO APPLICATIONS ·Relay drivers ·High speed inverters;converters

2SB1135

Abstract: 2SD1668
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1135 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max.)@ IC= -4A ·Complement to Type 2SD1668

2041A

Contextual Info: Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

Contextual Info: 2SB1135 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SB1135

Abstract: 2094B
Contextual Info: Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

2SB1135

Contextual Info: JMnic Product Specification 2SB1135 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1668 ・Low collector saturation voltage ・Wide ASO APPLICATIONS ・Relay drivers ・High speed inverters;converters ・General high current switching application

2SB1135

Abstract: 2SD1668
Contextual Info: Ordering number:ENN2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. unit:mm

2SD1668

Abstract: 2SB1135
Contextual Info: SavantIC Semiconductor Product Specification 2SD1668 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1135 ·Low collector saturation voltage ·Wide safe operating area APPLICATIONS ·For relay drivers,high-speed inverters,

2SB1135

Abstract: 2SD1668
Contextual Info: Inchange Semiconductor Product Specification 2SB1135 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1668 ・Low collector saturation voltage ・Wide ASO APPLICATIONS ・Relay drivers ・High speed inverters;converters

2SB1135

Abstract: 2SD1668
Contextual Info: JMnic Product Specification 2SB1135 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1668 ・Low collector saturation voltage ・Wide ASO APPLICATIONS ・Relay drivers ・High speed inverters;converters ・General high current switching application

d1668

Abstract: 2SB1135 2041A lm 2094 2SD1668
Contextual Info: O rd e rin g n u m b e r: EN2Q94B 2SB1135/2SD1668 PNP/NPN Epitaxial P lanar Silicon Transistors 50V/7A Swtching Applications A p p licatio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current switching F e a tu re s

2SB1135R

Contextual Info: 2SB1135R Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)4

Contextual Info: 2SB1135Q Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)4 @I(C) (A) (Test Condition)4

Contextual Info: 2SB1135S Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)4

2SA1598

Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
Contextual Info: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

2SD313

Abstract: transistor 2sC3781 2SD1159 2sa128
Contextual Info: SAUYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s * Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device *More collector dissipation available when a device alone is used

SB145

Abstract: 2sd1159 hc/2SB824 transistor 2sb507 sanyo 2Sd1666 2sa128 2SB824 transistor 2sd313
Contextual Info: SAfíYO Micaless T0-220ML P a c k a g e Power Transistors F e a t u r e s ♦ Less cost and man-hour because of no insulator required for mounting * High-density mounting available because of plastic-covered heat sink of device ♦ More collector dissipation available when a device alone is used

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sa128

Contextual Info: í?/píVO Low-Saturat ion Vol tage Seri es T0“220, MF, ML Pack g > A p p l i c a t i o n s ♦ Relay drivers. * High-speed inverters. * Conve r te r s . * H igh-cu r ren t switchinf! F e a t u r e s * Low VCE(sat). * Highly resistant to breakdown because of wide ASO. * Fast switching

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2SC3253

Abstract: 2SB1267 2SB1467 2SB903 2SB919 2SD1212 2SD1235 2SD1903 2SD2218 SC74
Contextual Info: Low-Saturation Voltage Series T0~220, M F ,ML Package A p p ] i c a t i o n s * Relay d r i v e r s . * High-speed in v e rte rs . * C onverters. * H igh-current F e a t u r e s * Low V C E ( s a t ) . * H i g h l y r e s i s t a n t t o b r e a k d o w n b e c a u s e o f w i d e ASO. * F a s t