2SA 42 Search Results

2SA1885

Abstract: 2SB1413 2SA1115 2SA1371 2SA1792 2SA1794 2SA1323 2sb946a K 1833 2SB940
Contextual Info: - m s Type Ho. 2SA 1820 2SA 1821 2SA 1823 2SA 1824 2SA 1825 2SA 1826 2SA 1827 , 2SA 1828 2SA 1832 2SA 1833 2SA 1834 , 2SA 1835 2SA 1836 2SA 1837 r 2SA 1838 2SA 1839 2SA 1840 2SA 1841 • 2SA 1843 2SA 1844 2SA 1845 2SA 1846 2SA 1847 2SA 1854 2SA 1855 2SA 1857

2sa1015

Abstract: 2SA603 2SA1255 2SA638 2SA673 2SA778 2SA821 2SA838 2SA921 2SA952
Contextual Info: - M £ Type No. tt « Manuf. H i# SANYO K 2Ê TOSHIBA * 2 SA 37 \0s ^ ' * * 2SA 38 ^ * * 2SA 39 ii M. 2SA 45 ¡K s 2SA1015 * 2SA 49 ï s 2SA1015 * T 2SA 50 t«^-' 2SA 51 * 2SA 52 ♦ 2SA 53 ♦ 2SA 119 drii ♦ 2SA 120 *±a * 2SA 304 ^ NEC B 1L HITACHI

TLE8209

Abstract: TLE8209-2SA IC HS 8108 power supply IC HS 8108 tle8209-2 abe 810 PG-DSO-20-37 tle8209-1 LS 7313 S tle8209 1E
Contextual Info: Data Sheet, Rev. 1.0, Feb. 2010 TLE8209-2SA SPI Programmable H-Bridge Automotive Power TLE8209-2SA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2sc 1203

Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Contextual Info: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240

2n3055 npn transistor toshiba

Abstract: TOSHIBA 2N3055 Transistor 2SA 2SB 2SC 2SD 2N3055 toshiba RF Transistor BF42 BU208 MP transistor transistor 2sc pnp
Contextual Info: 2. Id e n tific a tio n System 2.1 A C) Transistors EIAJ METHOD TOSHIBA HOUSE No. Example) (Example) 2SC 4289 A 1st 2nd 3rd ST100Q22 SI 298 1st group: transistor types are indicated as shown below. 1st group characters 2SA PNP high-frequency use 2SB PNP low-frequency use

2SA1804

Abstract: 2SC4689 111s1
Contextual Info: 2SA1804 TO SH IBA 2SA 1804 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.8±0.5 i Complementary to 2SC4689 Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. 0 3 .6 Í0 .2 3.5 MAXIMUM RATINGS Ta = 25°C

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

2SA1264

Abstract: 2SA1264N 2SC3181N 8 open colector output
Contextual Info: AOK AOK Semiconductor Product Specification Silicon PNP Power Transistors 2SA 1264N D E S C R IP TIO N • W ith TO -3P l package • Com plem ent to type 2S C 3181N • 2SA1264 with short pin A P P LIC A TIO N S • Pow er amplifier applications PINNING

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

max 9240

Abstract: max9240
Contextual Info: • R A dvan c ed W*Æ POWER Techno lo g y A PT8028J V R soov 2sa o.2soq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

transistor k117

Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Contextual Info: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100

Contextual Info: Ordering number : EN 3011 2SA 1682 i P N P E p ita x ia l P la n a r S ilicon T ra n s is to r SAXYO TV Camera Deflection, High-Voltage Driver Applications F e a tu r e s . H igh b reak d o w n v o lta g e V c e o — 300V • S m all re v e rse tr a n s f e r c a p a c ita n c e a n d e x c e lle n t h ig h freq u e n cy c h a ra c te ris tic (cre : 1.5pF t y p )

3182N

Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

T0126M

Contextual Info: SÂmo VI DEO O U TPUT ADOPTION OF F B E T PRO CESS Absolute M aximum Ratings/Ta = 2 5 t! Type Number Case Applications VcBO Vceo ic Electrical C h a r a c te r is t ic s ^ = 2 5 °C Pc T] *TC=•2&V hps fr EVI m lA] m I t"CJ m m {A] m ÎA] 2SC3595 T0126

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

OC305

Abstract: 2sc180 102 TRANSISTOR 20p 2N1524 ASZ20 2SA475 2SA474 2SA28 2. germanium OC309-1
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GR 1815

Abstract: 2SA950Y 1815gr 2SC1815Y 2SC2229Y 2SC2229-Y 2SA10150 1959Y 2SA562Y BF594
Contextual Info: BHARAT ELEK/ SEPII COND DI M7E B • m 3 S 3 ciö O O OO Dl l T54 ■ BEL I jz*2 7 - ò ] VCE Si VCEO D e v ic e No VCBO V ebo V o lts V o lts V o lts min mm mm hFE le at bias min /m ax mA VCE 1 CM V o lts mA m ax P lo t mW max IC B O typ Sat V o lts ÍT

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

2sb526

Abstract: 2sc1060 2SC789 2SD359 2SA816 2SB529 2SD331 2SD365 2SB513A 2SB514
Contextual Info: Power Transistors TYPE POLA­ NO. RITY P Pd IC VCEO mW (A) (V) 25 20 3 2 20 10 10 min max 80 50 30 40 2 2 0.8 50 20 80 40 55 55 160 320 320 300 300 10 40* 30 25 25 2 2 20 60 60 40 50 55 60 40 40 35 300 200 240 240 320 35 40 70 40 40 320 400 240 240 2SB 513A

SFT308

Abstract: TI365 2N2209 2N2625 2N2928 2G302 2G395 2SA204 2SA283 R107
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,