5189M Search Results

30191

Abstract: 30192 2SC4412
Contextual Info: Ordering number: EN 3019 2SC4412 No.3019 NPN Triple Diffused Planar Silicon Transistor SA\YO i TV Camera Deflection, High-Voltage Driver Applications Features . High breakdown voltage Vqeo —300V • Small reverse transfer capacitance and excellent high frequency characteristic (cre: l.OpF typ)

30192

Abstract: 30191 2SC4412 EN3019
Contextual Info: Ordering number:EN3019 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.0pF typ).

ENN3011

Contextual Info: Ordering number:ENN3011 PNP Epitaxial Planar Silicon Transistors 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).

pa 2030a

Abstract: cp 035 sanyo NPN S2e 2SC4412 Marking transistor 3019 Transistor
Contextual Info: SA NY O S E M I C O N D U C T O R 25E D CORP 7T= 707b 0 0 Q 7 0 3 7 b T -3H 7 2SC4412 ^ N PN Triple Diffused Planar Silicon Transistor 2018 A TV Camera Deflection, High-Voltage Driver Applications D3019 F e a tu r e s . H igh breakdow n voltage (V c e o —300V)

Contextual Info: Ordering number : EN 3011 2SA 1682 i P N P E p ita x ia l P la n a r S ilicon T ra n s is to r SAXYO TV Camera Deflection, High-Voltage Driver Applications F e a tu r e s . H igh b reak d o w n v o lta g e V c e o — 300V • S m all re v e rse tr a n s f e r c a p a c ita n c e a n d e x c e lle n t h ig h freq u e n cy c h a ra c te ris tic (cre : 1.5pF t y p )

Contextual Info: SANYO SEMICONDUCTOR SEE CORP 2SA1687, 2SC4446 7=H707b D Q0Q75T7 T T -29-/5 # P N P /N PN Epitaxial Planar Silicon Transistors 2 059 Low<Frequency General-Purpose Amp Applications High V iEBO 3013 F e a tu re s . V ery sm all-sized package p erm ittin g th e 2SA1687/2SC4446-applied sets to be m ade sm all a n d slim

pa 2030a

Abstract: 2SA1682
Contextual Info: SANYO SEMICONDUCTOR S5E CORP D 7 cH 7 Q 7 t i O O 07 □ E ñ S 2SA1682 r - 5 /- /7 P N P Epitaxial P ia n a r S ilico n T ran sis to r 2018A TV Camera Deflection, High-Voltage Driver Applications 3011 F e a tu re s . H igh breakdow n voltage V q eo —300V

2SA1683

Abstract: EN3012
Contextual Info: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.

2SA1687

Abstract: 2SC4446 EN3013 d 2059
Contextual Info: Ordering number:EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions • Very small-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.

SA1683

Abstract: A1683 SA168 2SA1683 CS19 SA16 5C44
Contextual Info: Ordering number : EN 3Q12 i 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial Planar Silicon Transistors SA YYO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications Features •Adoption of FBET process ■High breakdown voltage : Vqeo > 80V : 2SA1683

2SA1687

Abstract: 2SC4446 SC44 TE 30132 HAB 20-S 2SA168
Contextual Info: Ordering n u m b e r:EN 3 0 1 3 2SA1687/2SC4446 No.3013 PNP/NPN Epitaxial Planar Silicon Transistors SAßiYO i Low-Frequency General-Purpose Amp Applications F eatu re s . Very small-sized package permitting the 2SAl687/2SC4446-applied sets to be made small and slim

2SA1682

Abstract: ITR04075 ITR04076
Contextual Info: 2SA1682 Ordering number : EN3011B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • • • • High breakdown voltage VCEO≥300V . Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).

2SA1683

Abstract: N1003 2SC4414 ITR04083 ITR04084 ITR04085
Contextual Info: Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.

EN3011

Abstract: marking CS
Contextual Info: 2SA1682 Ordering number : EN3011A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • • • • High breakdown voltage VCEO≥300V . Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).

Contextual Info: Ordering number : EN 3011 N o.3011 _ 2 S A 1 6 8 2 PN P E pitaxial P lan ar Silicon T ransistor SAMVO i TV Camera Deflection, High-Voltage Driver Applications F e a tu r e s . High breakdow n voltage Vqeo ^ 3 0 0 V • Sm all reverse tran sfer capacitance and excellent high frequency characteristic (cre: 1.5pF ty p )

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

marking rsed

Contextual Info: Ordering number : EN 3 0 1 3 2SA1687/2SC4446 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications F e a tu re s . Very small-sized package perm itting the 2SA1687/2SC4446-applied sets to be made small and slim • High Vebo

DD15S30

Abstract: 2SA1683 60V PNP TO-92 DD15S
Contextual Info: Ordering number: EN 3 0 1 2 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial P lanar Silicon Transistors SA X YO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications F e a tu re s - Adoption of FBET process • High breakdown voltage: Vceo > 80V

2SA1687

Abstract: 2SC4446 ITR04116
Contextual Info: Ordering number:ENN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 • Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.

Contextual Info: Ordering number:ENN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 • Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim.

2SA1682

Abstract: EN3011 marking C.S marking CS
Contextual Info: Ordering number:EN3011 PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency chacateristic (Cre : 1.5pF typ).