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    2SA1683 Search Results

    2SA1683 Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA1683
    Sanyo Semiconductor Transistor - Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Original PDF 138.87KB 4
    2SA1683
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 107.1KB 2
    2SA1683
    Unknown Transistor Substitution Data Book 1993 Scan PDF 35.18KB 1
    2SA1683
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 44.64KB 1
    2SA1683
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.54KB 1
    2SA1683
    Unknown Japanese Transistor Cross References (2S) Scan PDF 39.27KB 1
    2SA1683
    Sanyo Semiconductor High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications Scan PDF 118.33KB 4
    2SA1683R
    Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF 459.61KB 5
    2SA1683S
    Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF 459.61KB 5
    2SA1683T
    Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors Scan PDF 459.61KB 5

    2SA1683 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1683

    Abstract: EN3012
    Contextual Info: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.


    Original
    en30122sa1683/2sc44142sa1683 PDF

    SA1683

    Abstract: A1683 SA168 2SA1683 CS19 SA16 5C44
    Contextual Info: Ordering number : EN 3Q12 i 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial Planar Silicon Transistors SA YYO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications Features •Adoption of FBET process ■High breakdown voltage : Vqeo > 80V : 2SA1683


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    2sa1683/2sc44142sa1683sa1683a1683+4sa168cs19sa165c44 PDF

    2SA1683

    Abstract: N1003 2SC4414 ITR04083 ITR04084 ITR04085
    Contextual Info: Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.


    Original
    enn30122sa1683/2sc44142sa1683n1003+42sc4414itr04083itr04084itr04085 PDF

    DD15S30

    Abstract: 2SA1683 60V PNP TO-92 DD15S
    Contextual Info: Ordering number: EN 3 0 1 2 2SA1683/2SC4414 No.3012 PNP/NPN Epitaxial P lanar Silicon Transistors SA X YO i Low-Frequency General-Purpose Amp, Low-Frequency Power Amp Applications F e a tu re s - Adoption of FBET process • High breakdown voltage: Vceo > 80V


    OCR Scan
    2sa1683/2sc44142sa16832034/2034asc-43+47tlt17d7bdd15s3060v pnp to-92dd15s PDF

    N3012

    Abstract: 2SA1683 2SC4414 ITR04083 ITR04084 ITR04085
    Contextual Info: 注文コード No. N 3 0 1 2 2SA1683/2SC4414 No. N3012 N3099 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 2SA1683 / 2SC4414 特長 ・FBET プロセス採用。 ・高耐圧である VCEO > 80V。 低周波一般増幅 ,


    Original
    2sa1683/2sc4414n3012n30992sa1683+62sc4414400maitr04095itr04083itr04084itr04085 PDF

    SS2205

    Abstract: 2SA1628 2SB814 HSI 527 2SA1284 2SA1178 2SA1283 2SA1586 2SB1043 2SA934
    Contextual Info: 33 tt « Manuf. ft 3 SANYO M TOSHIBA m « T y p e No. o a ED - ±L HITACHI S ± FUJITSU 35 ta T DTA123YS 1505 n m w * 2SA 1506 m w m ,^ 2SA 1 507 , 2SA 1508 2SA 1509 2SA 1510 ' 2SA 1511 /• = ft 2SA 1512 & T 2SA 1 5 1 3 -■ a 2SA 1514 □ - A 2SA1257 2S A 1 1 6 3


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    ss2205un411hrt1p234sdta123ys+152sa17812sa11622sb7362sb709a2sa12352sa17532sa16282sb814hsi 5272sa12842sa11782sa12832sa15862sb10432sa934 PDF

    2SB1406

    Abstract: 2SK715
    Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP


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    2sc37792sc37782sc37772sc3776+22sb14062sk715 PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


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    t0220mlto-32-0702sa1678fc102+72sc44492sa14162sj1932sk2832sc4106 application notes2sc3383fc124 PDF

    2SC4415

    Abstract: 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4397 2SC4399 2SC4400
    Contextual Info: - 200 - W. n Ta=25T . *EP(àTc=25‘C) m % ffl iâ , , VCEO (V) 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4408 2SC4409 2SC4410 2SC4411 2SC4412 2SC4413 2SC4414 2SC4415 2SC4416 2SC4417


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    2sc43932sc43942sc43962sc4397+92sc43982sc43992sc4400900mhz2sc44162sc44172sc44152sc44182sc4427 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    t258-omifax062sc1442sd466+12sc5266 PDF

    2SC308

    Abstract: 2SA1699 2SA1392
    Contextual Info: S m a l 1- s i g n a l SA\YO Transistors For low noise, h i g h v o l t a g e a n d g e n e r a l use We have other smal 1-signal transistors which are not included in any classified types nor packages in this document. They are for low noise, high voltage and general use.


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    sc-512sa16832sc44142sa1392+82sc3383t0-1262sa14502sb6312sd600o-1262sc3082sa1699 PDF

    AUDIO AMPLIFIER

    Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
    Contextual Info: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr


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    fc1502sc36512sc36502sa1766+92sc47052sc43902sk5962sk5462sa1813/2sc44132sk304audio amplifieraudio amplifier power transistors2sk404 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    2SA1249

    Abstract: 2SB63
    Contextual Info: S m a l 1- s ig n al ÄMIVO Transistors For low noise, h ig h v o l t a g e and general use ffe have o t h e r s m a l l - s i g n a l low n o i s e , t r a n s i s t o r s which a r e not inc lud ed in any c l a s s i f i e d types nor packages in t h i s document.


    OCR Scan
    2sa10162sc23622sa13912sc3382+7sc-51o-1262sa14502sc37082sb632sd6002sa1249 PDF

    2SA1692

    Abstract: 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680
    Contextual Info: - 46 - m X Ë fà s ít £ ffl & Vcbo V 2SA1678 Hi# INV/SW/D ' 50 (Ta=25‘ C , * E P ( á T c = 2 5 cC ) VcEO (V} - 50 I c (DC) 0.15 2SA1680 PA/PSW - 60 -50 -2 0. 9 PA/PSW '60 - 50 -2 0.5 HV D -300 -300 -0.05 0. 25 -100 -80 -0.5 0. 3 -40 -20 -0.15 0.15


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    2sa16782sa16802sa16812sa168z+152sa16832sa16852sa17072sc44882sa17082sc44892sa16922sa17192sa17122sa17152sa11072sc4490mp402sa16992sa1115 PDF