2SA1680 Search Results

2SA1680 Datasheets (19)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA1680	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC4408	Original	PDF	172.27KB	4
2SA1680	Various Russian Datasheets	Transistor	Original	PDF	84.39KB	8
2SA1680	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	107.11KB	2
2SA1680	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	37.4KB	1
2SA1680	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	44.64KB	1
2SA1680	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	110.54KB	1
2SA1680	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	84.1KB	1
2SA1680	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	39.27KB	1
2SA1680	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	54.26KB	1
2SA1680	Toshiba	Silicon PNP transistor for power amplifier and power switching applications	Scan	PDF	190.92KB	3
2SA1680	Toshiba	Transistor - PCT Process	Scan	PDF	166.63KB	2
2SA1680	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF	190.95KB	3
2SA1680,F(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3	Original	PDF	191.36KB
2SA1680,T6ASTIF(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3	Original	PDF	191.36KB

2SA1680,T6F(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3	Original	PDF	191.36KB
2SA1680,T6SCMDF(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3	Original	PDF	191.36KB
2SA1680(F,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3	Original	PDF	191.36KB
2SA1680(T6DNSO,F,M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 50V TO226-3	Original	PDF	191.36KB
2SA1680(TE6,F,M)	Toshiba	2SA1680 - TRANS PNP 50V 2A TO-92MOD	Original	PDF	172.29KB	4

2SA1680 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LED display module Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is M ulti Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED	OCR Scan	td62m8604af 2sa1680 hsop16 led display module	PDF
A1680 Abstract: 2SA1680 2SC4408 Contextual Info: 2SA1680 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)	Original	2sa1680 2sc4408 o-92mod 20070701-ja +1a1680	PDF
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2sa1680 2sc4408	PDF
transistor A1680 Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2sa1680 2sc4408 transistor a1680 a1680 +12sa1680 transistor	PDF
transistor A1680 Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2sa1680 2sc4408 transistor a1680 2sa1680 transistor +4a1680 a1680 transistor toshiba transistor silicon pnp epitaxial type transistor 2sa1680	PDF
Contextual Info: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )	OCR Scan	2sa1680 900mw 300ns 2sc4408 +1o-92mod	PDF
A1680 Abstract: 2SC4408 2SA1680 Contextual Info: 2SA1680 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)	Original	2sa1680 2sc4408 o-92mod a1680	PDF
Contextual Info: T O SH IB A 2SA1680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm 5.1 M AX • Low Collector Saturation Voltage : V cE (sat) = - 0 .5 V (Max.) (IC = - 1A) •	OCR Scan	2sa1680 900mw 300ns 2sc4408 +1961001eaa2	PDF
A1680 Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680 Contextual Info: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)	OCR Scan	2sa1680 900mw 300ns 2sc4408 +5961001eaa2 a1680 transistor a1680 2sa1680 transistor transistor 2sa1680	PDF
Contextual Info: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT • v ■ V ■ ■ MULTI CHIP * m ■ 8ch LO W SATURATION VOLTAGE SOURCE DRIVER The TD62M 8604AF is M u lti C hip 1C in co rp o ra tes 8 lo w sa tu ra tio n discrete PNP : 2SA1680 transistors.	OCR Scan	td62m8604af td62m 8604af 2sa1680 +2hsop16 hsop16-p-300-1	PDF
TD62M8604AF Abstract: 2SA1680 HSOP16 Contextual Info: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display	Original	td62m8604af 2sa1680 hsop16	PDF
Contextual Info: TO SHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED	OCR Scan	td62m8604af 2sa1680 hsop16 ou05-15 +1hsop16-p-300-1	PDF
Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display	Original	td62m8604afg 2sa1680 hsop16	PDF
transistor A1680 Abstract: 2sa1680 TRANSISTOR A1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2sa1680 2sc4408 o-92mod transistor a1680 +22sa1680 transistor a1680	PDF

transistor A1680 Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680 Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2sa1680 2sc4408 transistor a1680 a1680 transistor +32sa1680 transistor transistor 2sa1680 a1680	PDF
2sa1680 Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1680 U nit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. » • • • Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P ç = 900mW (Ta = 25°C)	OCR Scan	2sa1680 900mw 300ns 2sc4408 +175maxll-	PDF
transistor 2SA1680 Abstract: 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR Contextual Info: 2SA1680 TO SH IBA 2 S A 1 680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )	OCR Scan	2sa1680 900mw 300ns 2sc4408 +6o-92mod transistor 2sa1680 a1680 sa1680 transistor a1680 2sa1680 transistor	PDF
2sc4793 Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201 Contextual Info: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)	Original	2sa1020 2sa1680 2sa1145 2sc2655 +82sc2482 2sc4408 2sc2705 o-220 2sa1837 2sc4793 npn general purpose transistors application 2sd201	PDF
2SA1692 Abstract: 2SA1719 2SA1712 2SA1715 2SA1107 2SC4490 MP40 2SA1699 2sa1115 2SA1680 Contextual Info: - 46 - m X Ë fà s ít £ ffl & Vcbo V 2SA1678 Hi# INV/SW/D ' 50 (Ta=25‘ C , * E P ( á T c = 2 5 cC ) VcEO (V} - 50 I c (DC) 0.15 2SA1680 PA/PSW - 60 -50 -2 0. 9 PA/PSW '60 - 50 -2 0.5 HV D -300 -300 -0.05 0. 25 -100 -80 -0.5 0. 3 -40 -20 -0.15 0.15	OCR Scan	2sa1678 2sa1680 2sa1681 2sa168z +152sa1683 2sa1685 2sa1707 2sc4488 2sa1708 2sc4489 2sa1692 2sa1719 2sa1712 2sa1715 2sa1107 2sc4490 mp40 2sa1699 2sa1115	PDF
Contextual Info: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)	OCR Scan	2sa1680 900mw 300ns 2sc4408 +275max 961001eaa2	PDF
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)	Original	2sa1680 2sc4408	PDF
Contextual Info: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display	Original	td62m8604af 2sa1680 hsop16	PDF
Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display	Original	td62m8604afg 2sa1680 hsop16 2006-06nt	PDF
Contextual Info: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display	Original	td62m8604afg 2sa1680 hsop16	PDF

2SA1680 Search Results

2SA1680 Datasheets (19)

2SA1680 Datasheets Context Search

LED display module

A1680

transistor A1680

transistor A1680

A1680

A1680

TD62M8604AF

transistor A1680

transistor A1680

2sa1680

transistor 2SA1680

2sc4793

2SA1692