2SA168 Search Results

LED display module

Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is M ulti Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED

2SA1689

Contextual Info: Ordering num ber:EN 3 2 3 3 No.3233 _ 2SA1689 PN P E pitaxial P lan ar Silicon T ransistor TV Camera Deflection, High-Voltage Driver Applications F e a tu re s • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic

A1680

Abstract: 2SA1680 2SC4408
Contextual Info: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)

Contextual Info: Transistors SMD Type Product specification 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage. 0.4 3 Features 1 frequency chacateristic Cre : 1.5pF typ . 0.55 Small reverse transfer capacitance and excellent high

Contextual Info: T O SH IB A 2SA1681 2 S A 1 681 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 1 .6M AX. —J- - 4.6M A X. 1.7M AX. i _E Low Saturation Voltage : V qe (sat)= -0.5V (Max.)

Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

Contextual Info: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)

ENN3011

Contextual Info: Ordering number:ENN3011 PNP Epitaxial Planar Silicon Transistors 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).

2SA1689

Abstract: ITR04154 ITR04155 ITR04156 ITR04157
Contextual Info: Ordering number:ENN3233 PNP Epitaxial Planar Silicon Transistors 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 5.0 • High breakdown voltage. · Small reverse transfer capacitance and excellent high

transistor A1680

Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

N3013

Abstract: 2SA1687 2SC4446 ITR04116 ITR04117 ITR04119
Contextual Info: 注文コード No. N 3 0 1 3 2SA1687/2SC4446 No. N3013 20800 2SA1687 / 2SC4446 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 低周波一般増幅用 ・超小型パッケージのためセットの小型化、薄型化が可能である。

2SA1688

Abstract: L21M ITR04133 ITR04134 ITR04135 ITR04136 ITR04137 ITR04138 2SA1256 GFE10
Contextual Info: 注文コード No. N 2 7 9 8 A 2SA1688 No. N 2 7 9 8 A 20400 半導体ニューズ No.2798 とさしかえてください。 2SA1688 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 用途 ・FM RF 増幅 , ミキサ , 発振 , コンバータ , IF 増幅用。

2SA168

Contextual Info: TOSHIBA 2SA1681 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 6 81 Unit in mm PO W ER SWITCHING APPLICATIONS l.GMAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0M ±0.05 : V ç e ($at)~ —0.5V (Max.) 5 ÍTn = _1 Ai'

2sd444

Abstract: 2SD44 1SA16
Contextual Info: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product

transistor smd marking KA

Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
Contextual Info: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681

transistor smd marking CS

Abstract: 2SA1682
Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage. 0.4 3 Features 1 frequency chacateristic Cre : 1.5pF typ . 0.55 Small reverse transfer capacitance and excellent high

Contextual Info: SANYO SEMICONDUCTOR SEE CORP 2SA1687, 2SC4446 7=H707b D Q0Q75T7 T T -29-/5 # P N P /N PN Epitaxial Planar Silicon Transistors 2 059 Low<Frequency General-Purpose Amp Applications High V iEBO 3013 F e a tu re s . V ery sm all-sized package p erm ittin g th e 2SA1687/2SC4446-applied sets to be m ade sm all a n d slim

2SA1681

Abstract: 2SC4409 A1681
Contextual Info: TO SH IBA 2SA1681 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 681 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 ±0.05 : V q ^ (sat)“ —0.5V (Max.) (IC = —1A)

pa 2030a

Abstract: 2SA1682
Contextual Info: SANYO SEMICONDUCTOR S5E CORP D 7 cH 7 Q 7 t i O O 07 □ E ñ S 2SA1682 r - 5 /- /7 P N P Epitaxial P ia n a r S ilico n T ran sis to r 2018A TV Camera Deflection, High-Voltage Driver Applications 3011 F e a tu re s . H igh breakdow n voltage V q eo —300V

2SA1681

Abstract: 2SC4409
Contextual Info: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · High speed switching time: tstg = 300 ns (typ.)

2SA1683

Abstract: EN3012
Contextual Info: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.

Contextual Info: SMD Type Product specification 2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage

Contextual Info: Ordering number: EN 3 2 3 3 _ 2SA1689 N o.3233 P N P Epitaxial Planar Silicon Transistor SA\YO TV Camera Deflection, High-Voltage Driver Applications Features • High breakdown voltage • Small reverse transfer capacitance and excellent high frequency characteristic

Contextual Info: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )