2S64 Search Results

Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat­ ing failure rates. The monitors include data from endur­

BC138

Abstract: 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 BSW12 OC74 transistor bc138 2sc113
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. TYPE No. ▼ — New Typ e + — Revised Specifications # Non-JEDE C type m anufactured outside u :s . a . t Switching type, also listed in Section 12

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

Polarizer Nitto

Abstract: C175 ic chip hhb S1D15B nitto UV tape
Contextual Info: U N C O N T R O L L E D D O C U M E N PART NUMBER REV. LCM-H 12864CGWF/C2 A T REV. A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11146. DATE 4.19.07 FRONT VIEW l.ö ö [a o 3 ^ ] 80,65±<l.20 [3.175±O.D081 - eso [O.iiO] MAX. 76.63 113,018] VA, 63.98 [2.519] LA, -

BC138 TRANSISTOR

Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

BC138 TRANSISTOR

Abstract: 2N4241 BD117 2N4042 BC138 transistor bc138 BC222 TRANSISTOR 2N4043 2N5508 2N5511
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

Contextual Info: A CALIFORNIA MICRO DEVICES Microcircuits Division Advanced Information Data Sheet CM241X 5V 4-Driver 5-Receiver RS-232 with Power-Down and Tristate CMOS DESCRIPTION FEATURES The CM241X family o f products is intended for communication applications which satisfy

Contextual Info: Prelim in ary Speo. MITSUBISHI LSIs Some contents are subject to change without notice. 2S64CBLD-10,-12,-15,-10B,-12B,-15B 134217728-BIT 2097152-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The 2S64CBLD is 2097152-word by 64-bit Synchronous DRAM module. This consists of eight

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

marking 2U diode t5

Abstract: diode hp 2800 hp 2800 diode diode hp 2835 schottky schottky diode marking A7 marking 2U diode C3 SOT23 HSMS2820 B7 SOT23 HSMS-2820
Contextual Info: rh p % H E W L E T T ftX fl PA CK A RD Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Package Lead Code Identification • Surface Mount SOT-23/SOT143 Package • Low Turn-On Voltage A s Low as 0.34 V at 1 mA • Low FIT (Failure in Time)

Contextual Info: Integrated D evice Technology, Inc. FAST CMOS OCTAL TRANSPARENT LATCHES FEATURES: - • Common features: - Low input and output leakage <1 max. - CMOS power levels - True TTL input and output compatibility IDT54/74FCT373T/AT/CT/DT - 2373T/AT/CT IDT54/74FCT533T/AT/CT

Contextual Info: 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT FEATURES: 1DT49C460 IDT49C460A IDT49C460B IDT49C460C IDT49C460D DESCRIPTION: • Fast Detect 12ns max. 16ns (max.) 25ns (max.) 30ns (max.) 40ns (max.) Correct 18ns (max.) 24ns (max.) 30ns (max.) 36ns (max.)

nitto UV tape

Abstract: C175 c3136 E250D RA226
Contextual Info: PART NUMBER REV. L C M - H 12 8 6 4 C G W F / C P1 UNC O N TRO LLED D O C U M EN T REV. FRONT VIEW NUMBER AND REVISION COMMENTS DATE A E.C.N. # 1 0 8 6 6 . B E.C.N. # 1 0 9 7 5 . 5 ,2 0 .0 2 4.B .03 C E.C.N. # 1 1 0 2 0 . 7 ,3 0 .0 3 □ E.C.N, # 1 1 0 4 9 ,

2N5508

Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BD117

Abstract: 2N3523 2N4241 st610 transistor BC138 2N1019 2N4042 2N3942 A520 2N3519
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12

BC138

Abstract: 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

OC170

Abstract: OC169 oc44 2S125 OC45 OC171 2S93 2SA42 2SA37 2SA70
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber DC Current Gain fab/ft* Cob hFE (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) VCBO VEBO Ic (V) Electrical characteristics (Ta=25ºC) (V) Pc ºñ°í Tj 2SA12 -16 -0.5 -15 80 85 8 10 2SA13 2SA14 -12 -16 -0.5 -0.5 -15

78LOS

Abstract: toyocom 45 e 4 b 2 f
Contextual Info: / TOYOCOM g ? E D M ñ l D 1 D 7 6 00DDS55 8 M TOYOCOM, an innovator in memory modules, has developed an effective new line of high-speed SRAM jnodules. These memory modules utilize 25 ns, 35 ns, and 45 ns SRAMs in SOJ packages, and can be applied in the development of higher speed computers to nrieet current processing

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,