AM2864B Search Results

am2664be

Abstract: rvb ah
Contextual Info: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write

AM9864

Abstract: AM2864BE-300/BXA
Contextual Info: a Am2864BE AdVMgo 8192 X 8-Bit Electrically Erasable PRO M Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

Contextual Info: ADV MIC RO inE 10RY}~Tb Ï Ë G5S7SEfl O O E b b l ? Am2864B 5a1 8 1 9 2 x 8 Electrically Erasable PROM Data protection features to prevent writes from occur­ ring during V cc power-up/down 32-byte page write mode Minimum endurance of 10,000 write cycles per byte with

AM2864B-3

Abstract: AM2864B-30 AM2864B-25
Contextual Info: Am2864B 8 1 9 2 x 8 Electrically Erasable PROM • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Ready/Busy pin and Data Polling for end-of-write indication • Data protection features to prevent writes from occur­

2864be

Abstract: M2864B
Contextual Info: Am2864BE 8192 X “'S 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS 5-V o n ly ope ra tio n M ilitary te m p e ra tu re range availab le S e lf-tim e d W rite C ycle w ith o n -c h ip la tc h e s R e a d y /B u s y pin and D a ta P olling fo r e n d -o f-w rite

floating-gate

Abstract: Valence eeprom memory cell
Contextual Info: EEPROM Process Information PROCESS AND TECHNOLOGY AM D's EEPROM technology is based on the highly successful N-channel EPROM process that has had years of manufacturing history at AMD. To achieve the goal of electrical erasability, an additional masking step

eeprom 2864a

Abstract: X2864AD X2864ADMB-25 2864A X2864ADMB X2864ADMB35 X2864BDMB DQ2864-250 X2864ADI35 X2864AEMB25
Contextual Info: Cross-Reference and Conversion Guides COMPETITOR CROSS-REFERENCE GUIDE and DC timing and operating characteristics that are different. Please consult the data sheets or your local AMD representative for more details. The following table serves as a cross-reference guide for

Contextual Info: Am28C256 3 2Kx8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 1 0 0 pA power-down current

Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat­ ing failure rates. The monitors include data from endur­

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

M38510

Contextual Info: REVISIONS DATE YR-MO-QA LTR DESCRIPTION A E d ito ria l changes throughout. Table I changes include: Vjh change, regrouped devices to d ifferen t lim its . Table I I , subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs

am28c256

Contextual Info: Am28C256 3 2 K x 8 Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 100 /uA power-down current 64-byte page write

X2864AD

Abstract: X2864AEMB25 X2864AEMB-25 X2864ADMB-25 X2864AEMB X2864AEMB-35 X2864ADMB 60395 X2864ADMB-35 DM2864H-250
Contextual Info: REVISIONS DATE YR-MO-OA LTR DESCRIPTION A Editorial changes throughout. Table I changes include: V jh change, regrouped devices to different limits. Table II, subgroups changed. Figures have been combined, some deleted. Quality Assurance and Quality conformance inspection paragraphs

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

EEPROM 2864 INTEL

Abstract: EEPROM 2864 2864 eeprom 2864 eeprom intel intel 2864 2864 rom CI EEPROM 2864 hn58064p-25 HN58064P-30 SEEQ 52B33
Contextual Info: - 76 - 2 3 6 4 m & tt £ iá g íc S l °C X4 '/ % > TAAC max (ns) TCAC max (ns) TOH ta x (ns) TO E max (ns) TO D max (ns) VDD (V) -h A SSL I DD/STAÍDBY (nA) V IL Biax (V) V IH min (V) ai C i max (pF) -h/m%n, m V O L / I VOL max (V/mA) V O H / IV O H min

am28c256

Contextual Info: ADV M IC R O ÍM E H O R Y } l b De | [1 2 5 7 5 2 6 Am28C256 0G2fe.fe.2fl i 27 32K x 8 Electrically Erasable PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current

eeprom 2864a

Abstract: AM2864A-2 rgv 527 Am2864A-3
Contextual Info: Am2864A DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication Data protection features to prevent writes from occur­ ring during V c c power-up/down

Device-List

Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

X2864Aemb-25

Abstract: X2864ADMB-25 74K-IM-W9U 20/AM2864A-25/BXA X2864ADMB35 X2864AD m2864 x2864aemb35 X2864AEMB25 WF vqe 24 e
Contextual Info: REVISIONS DATE YR-MO-OA LTR DESCRIPTION A E d ito r ia l changes th ro ug h ou t. Table I changes in c lu d e : Vjh change, regrouped devices to d if f e r e n t lim it s . Table I I , subgroups changed. Figures have been combined, some d e le te d . Q u a lity Assurance and Q u a lity conformance in s p e c tio n paragraphs

Contextual Info: n Am2864AE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication

TDA 2051

Abstract: AM2864AE-255DC
Contextual Info: a Am2864AE Adva“ £ 8192 x 8-Bit Electrically Erasable PROM Devices DISTINCTIVE CHARACTERISTICS • • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches Data Polling for end-of-write indication

Contextual Info: EEPROM Highlights WHY USE EEPROMS? A wide spectrum of memory devices have been devel­ oped to fill particular needs. Read-Only Memories ROMs have high density and fast data access. The biggest disadvantage is the production volume required with an unalterable data pattern. Random-Access

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154