2N90 Search Results

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2N90

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90Z Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N90Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and

BC125

Abstract: 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 V BR CEO 10 15 TP5451 40080 MPS3566 MPS3566 2S741 2S741 2S741A PET3704 PET3705 2N471 ~~1~~~ 20 25 - 30 35 D4C28 4C28 2N546 2N1252A 2N1252A 2N907 2N761 BC120 ~g~~g SE8oo1

2n90

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

2N90

Abstract: 900v 2.2a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N90 Preliminary Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specialized in allowing a

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

transistor 2n9013

Abstract: 2n9013 PJ2N9012
Contextual Info: 2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION • • • • SOT-23 High total power dissipation PT=625mW High collector Current (Ic=-500mA) Complementary to 2N9013 Excellent hEF Linearity

4N90

Abstract: 2N45 2N90 NAR42A-2N45 Burndy penetrox TM A
Contextual Info: y Il REV. ! 2 3 4 DATE R E V IS IO N D E S C R IP T IO N BY M /Z V -Z A - W W A l i l f O O 0 J 9 J -Z .7 6/18/90 NAR46A-4N90 ADDED PER D.O. 51744 . M !R 3/17/93 NAR29A-2N90 ADDED PER (D.O. 52582) M S P 5/6/93 NAR46A-2N90 ADDED PER (D.O. 52634) M S P C ’ K ’ D.

2n9013

Abstract: transistor 2n9013 2N901 transistor 33 transistor pnp Vcbo 25V 2n9013 equivalent PJ2N9012 PJ2N9012CT PJ2N9012CX PT-625mW
Contextual Info: 2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION • • • • SOT-23 High total power dissipation PT=625mW High collector Current (Ic=-500mA) Complementary to 2N9013 Excellent hEF Linearity

p2n85

Abstract: TP2N90 2N85 mtp2n85 T0204 MTM2N85
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 2N85 M TM 2N90 M T P 2N 85 M T P 2N 9 0 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -C h an n el E n h an cem en t-M od e S ilic o n G ate T M O S These TMOS Power FETs are designed for high voltage, high

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

MHT5002

Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC640

Abstract: 3N27 BC130C
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2n1841

Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2N9038

Abstract: 2N5039 2N503S 2N903 2N5038 JANTX 2N5039 2N5039 JANTX JANTX 2N5038
Contextual Info: JAN, JANTX, JANTXV 2N5038 JAN, JANTX, JANTXV 2N5039 POWER TRANSISTORS 20 Amp, 150V, Double Diffused NPN Mesa FEATU RES • • • • • DESCRIPTION These M IL approved double diffused glass passivated mesa power transistors com bine fast-switching, low saturation

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SA143

Abstract: transistor 2sa143 T01A 2SA298 2SA327 CK16A 2N640 2SA297 2SA80 2V465
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC114 transistor

Abstract: FZJ 131 usaf516es047m PMT222 2SC286 2SC287 2SC430 400M transistor 2SC114 replacement transistor 2SC114
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

fc8050

Abstract: SC 3400 AVN1106 2N901 18PF WE9143 DTMF and emergency 2N9014 npn transistor
Contextual Info: _ WE9143 1 3 -MEMORY TONE/PULSE DIALER GENERAL DESCRIPTION The WE9143 is a monolithic integrated circuit. It contains 13-Memories which c a n perform Tone/Pulse switchable dialing functions and Long Distance Service Com pany Such as MCI, SPRINT a c c e ss co d es operations for modern telephone set design. It is fab ricated in CMOS technology