2N5487 Search Results

2N5487

Abstract: 2N5437
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 {212)227-6005 FAX: (973) 376-8960 2N5487 2N5488 POWER TRANSISTORS 5 Amp, 150V, Planar NPN 5487-1 5487-3 5488-1 5488-3 FEATURES • Collector-Base Voltage: up to 150V • D.C, Collector Current: 5A

2N3507 JANTX

Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
Contextual Info: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C

N5488

Abstract: 2N5488 2n5487 5488
Contextual Info: 2N5487 2N5488 POWER TRANSISTORS 5 Amp, 150V, Planar NPN 5487-1 5487-3 5488-1 5488-3 FEATURES D ESCRIPTION • • • • • • U nitrode power tra n sistors provide a u niq u e com bination of low saturation voltage, h igh gain and fast sw itching. They

2N4116

Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
Contextual Info: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850

2N5385

Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO

Contextual Info: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152

9300

Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
Contextual Info: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725