2N3467
Abstract: 2m324
Contextual Info: TYPES « i r i 2N3467, 2N3468 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 0 5 7 6 , M A Y 1 9 6 8 - flE V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED CORE-DRIVER APPLICATIONS • High Dissipation Capability. . . 10 Watts at 25°C Case Temperature
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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2n2301
Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74
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2n7272n869a2n929a2n930+162n930a2n15722n1s732n15742n24s32n24842n23012n4001 dioded8802n30512n2b312n125 tid880 npn2n70jtransistor d8802n1815
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2N5487
Abstract: 2N5437
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 {212)227-6005 FAX: (973) 376-8960 2N5487 2N5488 POWER TRANSISTORS 5 Amp, 150V, Planar NPN 5487-1 5487-3 5488-1 5488-3 FEATURES • Collector-Base Voltage: up to 150V • D.C, Collector Current: 5A
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2n54872n54882n34m3n54j7+5200ma10mhz2nm873000s2n5437
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2N4354
Abstract: 2N3495 MM4000
Contextual Info: MOTOROLA'SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 DEjt,3L?aSS D IODES/OPTO 34C G03ÛD1E T 38012 D SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) die no. MPSAC55 — PNP LINE SOU RCE — DMB158 This die provides performance similar to that of the following device types:
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mpsac55dmb1582n34t42n3495+62n34m2n34s72n43542n435cmm4000mps4354
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2M3501
Abstract: k3499
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3498JAN, 2N3499JAN, 2N3500JAN, 2N3501 JAN, JTX, JTX, JTX, JTX, JTXV, JTXV, JTXV, JTXV, JAN S JAN S JANS JANS CRYSTAlOfJCS 2805 Veterans High* Processed per MIL-S-19500 366 Suite 14 NPN Silicon Sm all-Signal T ra n sis to rs Ronkor,Kof*ia. N.Y. 1*
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2n3498jan2n3499jan2n3500jan2n3501+3mil-s-195002m3501k3499
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