2N4014 Search Results

2N4014

Contextual Info: 2N4014 NPN Small Signal High Current High Speed Switch. 1.65 Transis. 1 of 2 Home Part Number: 2N4014 Online Store 2N4014 Diodes NPN Sm all Signal High C urrent High Speed Sw it c h. Transistors Enter code INTER3 at

2N4014

Abstract: ST 2N4014
Contextual Info: 2N4014 MAXIMUM RATINGS Sym bol 2N 4014 U n it C ollector-Em itter Voltage R atin g v CEO 40 Vdc C o llecto r-Base Voltage VCBO 80 Vdc Em itter-Base Voltage Ve b o 6.0 Vdc C o llector C urrent — Continuous — Peak 'C 1.0 2.0 Ade Total D evice Dissipation >i T a = 2 5 X

2N4014

Abstract: transistor 2N4014
Contextual Info: 2N4014 HIGH-VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT 300 MHz and tight

2N4014

Contextual Info: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C

Contextual Info: 3GE P • 7^537 Q031SQ3 0 ■ 'T'-'ZS- 1 S C S -T H O M S O N ^ r a @ i p O T o ) 3D(gi 2 N 4014 S G S-THOMSON HIGH-VOLTAGE, HIGH CURRENT SWITCH DESC RIPTIO N The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current

BCY651X

Abstract: 2N6540 SG-333 bsw43a SG333 2N5081 2N2097A BCY65EPDM SE4020 2N2094A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2SC3623K JE9153A 2SC3112A 2SC3295 2SD1582K JE9153B JE9153 JE9153C 2SC3112B MPS3725 ~~:i;525 15 20 25 30 TP4014 2SC3325 BSW42A BSX51A BSX51A BSX51A PN4014 2N4014 25C3393S BSW43A BSW43A BSX52A BSX52A

TA1N

Abstract: 2n4014
Contextual Info: TYPES 2N4013, 2N4014 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 7 , M A R C H 1973 FAST, H IG H -V O LT A G E , H IG H -C U R R E N T CORE D R IV E R S • hpE Guaranteed from 10 mA to 1 A • Guaranteed Switching Times at 500 mA •

2N4013

Abstract: 2n4014 DE800 2N4013 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F L2E 0 | b3b72S4 Q 0 f lt 3f l ö S | r - w - i? 2N4013 2N4014 CASE 22-03, STYLE 1 TO-18 TO-2Q6AA M AXIM UM RA TIN G S Symbol Rating 2N4013 2N4014 Unit Collector-Emitter Voltage VCEO 30 50 Collector-Base Voltage VCBO 50 80 Emitter-Base Voltage

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

2N3725

Abstract: complement to 2n3700 2N3253 TA100-F FTS03904 curve set t144 2N3700 2N3724 test 2N3700 tl 4013
Contextual Info: FAIRCHILD SEMICONDUCTOR _ A4 _ DE §341^1,74 GOSTSSl 3 FAIRCHILD 2N3253 A Schlumberger Company NPN Switching Type ABSOLUTE MAXIMUM RATINGS Note 1 Temperatures Storage Temperature -65° C to 200° C Operating Junction Temperature 200° C Power Dissipation (Notes 2 & 3)

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

2n2222 sot-23

Abstract: 2N2369 SOT-23 2N2907 SOT-23 bcy79 sot23 BC461 2N5322 bc107 sot23 SOT-23 2N2222 2N3700 sot23 2n2222a SOT223 So642
Contextual Info: TRANSISTORS SMALL SIGNAL TO-39 TO-18 SOT-223 SOT-23 NPN GENERAL PURPOSE TRANSISTORS - TO-18 hFE @ IC VCEO VCER* VCE sat @ IC / IB Type (V) min/max (mA) 55 50/– 50 30 40 80 80 100/300 100/300 40/– 100/300 150 150 150 150 max fT ts Ptot Also available min

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

MM4003

Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein: