2N3902 JANTX Search Results

Contextual Info: NPN High Power Silicon Transistors 2N3902 & 2N5157 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage Ratings VCEO 400 500 Vdc Emitter - Base Voltage

2n3902

Contextual Info: NPN High Power Silicon Transistors 2N3902 & 2N5157 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 TO-204AA Package Maximum Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage Ratings VCEO 400 500 Vdc Emitter - Base Voltage

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

2N3902

Abstract: 2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current

2N3902

Abstract: 2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

2N3902

Abstract: 2N5157 JANTX2N5157
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices Qualified Level 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

2N5157

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 371 Qualified Level Devices 2N3902 JAN JANTX 2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation

2N3902

Contextual Info: 2N3902 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N3902 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N3902 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3902

Abstract: 2N3902 JANTX 2n5157 2N3788
Contextual Info: HIGH VOLTAGE TRANSISTORS TO pt TYPE NO. lc lc Veto u i. SÜS MAX MA V 2d n A 100 *V ce x 2,0 325 325 400 3.5 3.5 109 100 o o 2N3788 10Q 2N3902 2 n 5157 100 <$ le VCEO ICEO V cex 125eC MA MA V V 100 5-9 .25 700* 2.5 .25 7 o o ' .5 400 500 •+JAN and JANTX

Contextual Info: 2N3902+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250u÷ @V(CBO) (V) (Test Condition)400 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)2.5

tca 765

Abstract: 2N3902 2883 TCA 325 A to-53 2N3788 2N5157 Beta SL
Contextual Info: HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. @ Ic VCEO Ic is Y M À X su i V MA Watts A 2N3788 1Q9 2N3902 100 2N 5157 1ÖÖ *V cex @ 2,0 3.5 15 25°C @ Veto V @ lao V cex Ic 125°C MA V MA Hfe ?25 100 400 5-9 325 100 400 .25 7 00* 2.5 4ÖÖ 1ÔÔ 5ÔÔ .25 7ÜÜ* .5

2N3902

Abstract: 2N5157 2N515 HFI9 l5a1 2N3788
Contextual Info: A P I ELECTRONICS INC 00433^2 Goooaab soo LIE D mine T -3 * I 3 HIGH VOLTAGE TRANSISTORS TO-3 PT TYPE NO. Ic 325 15 4ÖÖ 1ÔÔ 20 @ 25°C 325 V MA 400 400 5ÔÔ VcEX @ 9 @ lo o in 3.5 100 100 V ceo q ' su s V MA MAX Watte A 2N3788 1Q0 2N3902 100 2N5157 1ÔÔ

diode cc 3053

Abstract: 2N3902 cc 3053 diode QML-19500 2N3902 IB VALUE 2N5157 MIL-PRF19500 cc 3053 K 3053 TRANSISTOR MC-16
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 October 1999 INCH-POUND MIL-PRF-19500/371D 23 July 1999 SUPERSEDING MIL-S-19500/371C 27 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

2H2904

Abstract: 2NI483-86
Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879

2N3902

Abstract: T0204 2N5685
Contextual Info: A POWERHOUSE BIPOLAR NPN M ESA POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 r« si VH| % TO-63 • DEVICE TYPE PEAK bvceo 'c VOLTS AMPS hFE min/max ■C@ VCE A V VCE s;M» max •c ü VOLTS A A 2N3715* 60 10.0 50-150 1.0/2.0 0.8 5 0 C.5 2N3716* 80 10.0

Contextual Info: BIPOLAR NPN MESA POWER TRANSISTORS TO-63 4 • h FE min/max < < o m ■c o PEAK VCE sat max VOLTS 'C @>B A A o T0-204 (TO-3) DEVICE TYPE O C /> ILI 1 o > m > PACKAGE AMPS 2N3715* 60 10.0 50-150 1.0/2.0 0.8 5.0/0.5 2N3716* 80 10.0 50-150 1.0/2.0 0.8 5.0/0.5

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

2NXXXX

Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Contextual Info: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

JANTX2N

Abstract: jan2n1482 15218 Jan2N3055
Contextual Info: ,' O r N i f i y û N C 0 i n \ Û N C Û J ' O r f N ^ T - i n C 0 î ' C 0 f f ' r m o ^ o r N r n ^ L n \ D h s . o o O ^ O O N N N N N N N r r r r - r ( N f N ( N ( N < N ( N ( N i N i n i n r inhvCO^rnrnrOrnrOrnm^'kO . , , , . , . , . , . s) N

406j transistor

Abstract: 2N6277 stc TO-59 Package 2n6341 stc 2N6277 JANTX 2N3418 NPN 25 Amps POWER TRANSISTOR to63 2N6277 JANTXV 2n5685 stc 2N3846
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE STC is one o f few remaining manufacturers o f NPN and PNP power transistors and Darlingtons. We maintain QML status on over 135 bipolar power transistor and