19S00 Search Results

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

2N1716

Abstract: 2M171 A771
Contextual Info: KIL-I-ltSOO/ft*14000 * u. loan f DPI ftSBOIlIC iininmvT j 30 August 197 9 HILITABY SPBCIFICATIOW TKAMSISTO&. »11. SILICON. POWBE TYPES 2 W 1 7 U THBOOGB 2*1717 This a n a d i t n t forai • part of Military Spacifi* cation K1L-S~19S00/263A BL • datad 15 May 1963

2N914

Abstract: transistor 331
Contextual Info: AMENDMENT 1 10 Septeaber 1975 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N914 AND TX2N914 This aatendmem fom s a part o f M ilitary Sp ecificatio n MIL-S-19S00/373A, dated 10 August 19TC, and is approved for use by a ll Departments and ~

diode equivalent

Abstract: JANTX1N3293
Contextual Info: IO R Government/ Space Products Diode, JAN Equivalent Diode, JAN Equivalent Diode 150 Amps P u t H um bert IR 80-1243 80-1243R Industrial Currant Rating A M ilitary Current Rating (A) Com pliant to M IL-8-19S00 Q ualification 150 150 /246 19000-410-84 150

Contextual Info: 6.60 0 . 260 Fig. 14 - Conforms to JE D E C Outline TO-258AA Dimensions in Millimeters and (Inches) BERYLLIA WARNING PER MIL S-19S00 Packages containing baryllia shall not bt ground, sandblasted, machined, or have other operations performed on them which

003S5

Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

1N1130

Abstract: 1N1131 GENERAL SEMICONDUCTOR diodes marking code me military part marking symbols jan JAN1N1 JAN1N1130
Contextual Info: J ttllrO T S M R l/Z d S A -S S C IO IIB I1 M Jttrn SUP&RS£p0fG M l L - S - l t5 Ü /2 S t E L u1 T ÌnA 1 4 &FTAPV e n e r v p i r am n w Æ. £ 1 4 % JL k / A A ^ V I X ' A V A A * V A 1 Se M k ju N d U l t O k P O 'T V P ir c a JL JL JL J U i K J d e v

2N158

Abstract: germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power
Contextual Info: ● MIL.S.19500/24D 18 March 1970 SUPERSEDING MI L-s.19500/24c 14 May 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N 158 This specifimticm partmenls is mandatory nnd/lgcncics for use of the Department by .11 Ocof Dcfensc.