1N589
Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993
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gd0d12s003s612ml-s-19s00/477bn1l-s-19s00/477a+161n58q21ns8041ns8061ns8071h58091ns8111n589in58091v5001m5811jantx 1n5811diode 1n58041n5896j 5804ns8021n5809 equivalent
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Contextual Info: POWER SEMICONDUCTOR DIVISION IN S ^ W JAN, JANTX AND JANTXV 1N5807 THRU 1N5811 GLASS PASSIVATED FAST EFFICIENT SILICON RECTIFIERS VOLTAGE RANGE- 50 to 150 Volts CURRENT- 6.0 Amperes .042 7. 07 .037 (0. 94) 1.30 (33.02) DIR. 0.70 (17.78) > J I . 300(7. 62)
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1n58071n5811mil-std-19500/47710seconds+1mil-std-20
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in5806
Abstract: 1N5815 Diode IN5809 IN5802 1N5812 diode
Contextual Info: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FEATURES • Exceptional Efficiency • Low Forward Voltage • Extremely Fast Reverse Recovery Time • Extremely Fast Forward Recovery Time • High Surge • Small Size
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1n5802-1n58061n5807-1n58111n5812-1n5816in5802+91n58031n58041n58051n58061ns807-1ns811in58061n5815 diodein58091n5812 diode
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B17S
Abstract: 2708 eprom DP8350 INS8060 INS807X INS8080 JNS8072 A11Z INS8070 2F27
Contextual Info: O ctober 1980 INS8070-Series Microprocessor Family General Description Features The INS8070-Series of m icroprocessors hereinafter referred to as the 70-Series Fam ily is intended fo r use in system s re q uiring the econom y of a single chip, the fle x ib ility of m ultiproce ssin g bus arch ite ctu re and the
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ins8070-series70-series16-bitjns8072+9b17s2708 epromdp8350ins8060ins807xins8080a11zins80702f27
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