003S5 Search Results

marking h3

Abstract: JJ SOT23
Contextual Info: MOTOROLA SC ~3M -CDIODES/OPTOï 6367255 MOTOROLA SC D eT | l 3L,75SS 003S577 34C CD I O D E S / O P T O 1 38277 T ' | D 3 7 - JJ SOT23 continued) MMBA956H3,4,5,6 DEVICE NO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW U c I I • Designed for general-purpose amplifier and switching

Contextual Info: ANALOG DEVICES INC A N A LO G D E V IC E S □ 5JE H M Q81b800 003S503 SSI H A N A —r - 71-11S P Isolated, Thermocouple _ SignalConditioner 2B50 FEATURES Accepts J, K, T, E, R, S or B Thermocouple Types Internally Provided Cold Junction Compensation

Contextual Info: HM51W16160 Series HM51W18160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-635C Z Rev. 3.0 Feb. 21,1997 Description The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

Contextual Info: PRELIMINARY M ACH COM’L: -7/10/12/15/20 a 1 1 1 - 7 /1 0 /1 2 /1 5 /2 0 Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 32 Outputs ■ 32 Macrocells ■ 32 Flip-flops; 4 clock choices ■ 7.5 ns tpD

40khz ultrasonic transmitter

Abstract: 40KHZ ULTRASONIC NA01 nb111eh NR001E NB021EY toko k
Contextual Info: Sö NATL SEHICOND {DISCRETE} NA01 NPN , NA02(PNP) 6 5 0 1 1 3 0 NA TL S E M I C O N D , DE I t.SD113G DG3SSS3 (D I S C R E T E ) _28C 35553 D National Semiconductor NA02(PNP) 80 mA complementary power transistors [~1~| package and lead coding features • 20 Volt/800 mA Amp rating

40khz ultrasonic transmitter

Abstract: 40KHZ ULTRASONIC NB111 NB111EH "Ultrasonic" "transmitter" 40khz ultrasonic transmitter 12V k 3555 NA01EX NR001E NB021EY
Contextual Info: 20 NATL SEHICOND {DISCRETE} 6501130 NATL SEMICOND, STr z a z a DISCRETE _28C 35553 NA02(PNP) 80 mA complementary power transistors [T~| package and lead coding features • 20 Volt/800 mA Amp rating ■ Low V qe (sat) and V qe (sat) characteristics at §

314 optocoupler

Abstract: 14cnp CNY17-3 OF4114 OPTOCOUPLER dc optocoupler 5V 102 Optocoupler A 3120 optocoupler
Contextual Info: Product specification Philips Semiconductors Optocoupler OF4114 FEA TU R ES • High current transfer ratio and low saturation voltage, making the device suitable for use with T T L integrated circuits • Fast switching • High degree of AC and DC insulation 3120 V (RM S and

AEI 7916

Abstract: FUNCTION GENERATOR LM1819 block DIAGRAM OF IC 7400 Function Generator IC 90 deg precision Sine Wave Generator speedo meter CS-8190DW20 CS-8190N16 norton op. amp
Contextual Info: CS-8190 CS-8190 Precision Air-Core Tach/Speedo Driver with Return to Zero Description The CS-8190 is specifically designed for use w ith air-core m eter m ove­ m ents. The IC provides all the func­ tions necessary for an analog tachom eter or speedometer. The

NT 407 F TRANSISTOR

Abstract: lm 383 ic BS415 BS7002 SL5582 SL5583
Contextual Info: Product specification P h ilip s Sem icond uctors High-voltage optocouplers SL5582/SL5583 FEA TU R ES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm minimum • High current transfer ratio and

s3331

Contextual Info: P h ilip s S em icond uctors Product specification High-voltage optocouplers SL5582/SL5583 FEATURES • A pin distance of 10.16 mm • An external clearance of 9.6 mm mimimum and an external creepage distance of 8 mm minimum • High current transfer ratio and

optocoupler 357

Abstract: S 357 OPTOCOUPLER 357 optocoupler SV-04 F pj 899 diode 7z14 SL5504
Contextual Info: SL5504 _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits. Features • High o u tp u t/in p u t DC current transfer ratio

zilog 1866

Abstract: XTAL NTK Z86E04 in 18 pins NTK oscillator 10 MHz 4 pins Z86CCP00ZEM Z86E04 Z86E08 ntk 8mhz 4 pin oscillator ntk 2MHz
Contextual Info: PRELIMINARY C ustom er P rcxjjrem en iSpecification < $ 2 iL C E Z 8 6 E 0 4 /E 0 8 S L 1 866 CMOS Z8 O T P M icro co n tro i a e r FEATURES Part Number ROM Kbytes RAM* (Bytes) Speed (MHz) Z86E08 Z86E04 2 1 125 125 12 8 * General-Purpose • ■ Program Options:

KM48V2100B

Contextual Info: KM48V2000BS CMOS DRAM ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: COM’L: -12 a Advanced Micro Devices M A C H 1 2 0 -1 2 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 48 Macrocells ■ 48 Flip-flops; 4 clock choices ■ 12nstro ■ 4 PAL blocks ■ 66.7 MHz max external

SOT-90B

Contextual Info: Product specification Philips Sem iconductors OF4114 Optocoupler FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with TTL integrated circuits • Fast switching • High degree of AC and DC insulation 3120 V (RMS and

bc2378

Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
Contextual Info: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi

Contextual Info: July 1990 Edition 1.0 DATA S H E E T FUJITSU MB88346 R-2R TYPE 8-BIT D/A CONVERTER WITH OPERATIONAL AMPLIFIER OUTPUT BUFFERS DESCRIPTION MB88346-P The Fujitsu M B88346 is an R -2 R type 8 -b it resolution d ig ita l-to -a n a lo g converter DAC , designed for interface with a wide range of general 4 -b it and 8 -b it